Peculiarities of Thermodynamic Behaviors of Xenon Adsorption on the Activated Carbon Prepared from Silicon Carbide

An activated carbon prepared from silicon carbide by thermochemical synthesis and designated as SiC-AC was studied as an adsorbent for xenon. The examination of textural properties of the SiC-AC adsorbent by nitrogen vapor adsorption measurements at 77 K, powder X-ray diffraction, and scanning elect...

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Bibliographic Details
Main Authors: Ilya Men’shchikov, Andrey Shkolin, Elena Khozina, Anatoly Fomkin
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Nanomaterials
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Online Access:https://www.mdpi.com/2079-4991/11/4/971
Description
Summary:An activated carbon prepared from silicon carbide by thermochemical synthesis and designated as SiC-AC was studied as an adsorbent for xenon. The examination of textural properties of the SiC-AC adsorbent by nitrogen vapor adsorption measurements at 77 K, powder X-ray diffraction, and scanning electron microscopy revealed a relatively homogeneous microporous structure, a low content of heteroatoms, and an absence of evident transport macropores. The study of xenon adsorption and adsorption-induced deformation of the Si-AC adsorbent over the temperature range of 178 to 393 K and pressures up to 6 MPa disclosed the contraction of the material up to −0.01%, followed by its expansion up to 0.49%. The data on temperature-induced deformation of Si-AC measured within the 260 to 575 K range was approximated by a linear function with a thermal expansion factor of (3 ± 0.15) × 10<sup>−6</sup> K<sup>−1</sup>. These findings of the SiC-AC non-inertness taken together with the non-ideality of an equilibrium xenon gaseous phase allowed us to make accurate calculations of the differential isosteric heats of adsorption, entropy, enthalpy, and heat capacity of the Xe/SiC-AC adsorption system from the experimental adsorption data over the temperature range from 178 to 393 K and pressures up to 6 MPa. The variations in the thermodynamic state functions of the Xe/SiC-AC adsorption system with temperature and amount of adsorbed Xe were attributed to the transitions in the state of the adsorbate in the micropores of SiC-AC from the bound state near the high-energy adsorption sites to the molecular associates.
ISSN:2079-4991