Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition

Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition

Structural health monitoring with piezoelectric thin films integrated on structural metals shows great advantages for potential applications. However, the integration of piezoelectric thin films on structure metals is still challenged. In this paper, we report the piezoelectric barium titanate [BaTi...

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Main Authors: Hui Du, Yang Li, Wei Zheng Liang, Yu Xuan Wang, Min Gao, Wen Huang, Yin Zhang, Yuan Lin
Format: Article
Language:English
Published: Hindawi Limited 2015-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2015/167569
id doaj-92b012e834ef4d68806f11fea0aa8b34
record_format Article
spelling doaj-92b012e834ef4d68806f11fea0aa8b342020-11-25T00:16:13ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292015-01-01201510.1155/2015/167569167569Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted DepositionHui Du0Yang Li1Wei Zheng Liang2Yu Xuan Wang3Min Gao4Wen Huang5Yin Zhang6Yuan Lin7State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, ChinaStructural health monitoring with piezoelectric thin films integrated on structural metals shows great advantages for potential applications. However, the integration of piezoelectric thin films on structure metals is still challenged. In this paper, we report the piezoelectric barium titanate [BaTiO3 (BTO)] thin films deposited on polycrystalline Ni substrates by the polymer assisted deposition (PAD) method using NiOx as the buffer layers. The NiOx buffer layers with different thicknesses were prepared by varying immersing time from 5 minutes to 4 hours in H2O2 solution. The dielectric and leakage current properties of the thin films have been studied by general test systems. The BTO/Ni heterostructure with 2-hour immersing time exhibits better dielectric properties with a dielectric constant over 1500 and a 34.8% decrease of the dielectric loss compared to that with 5-minute immersing time. The results show that the leakage current density is strongly affected by the thickness of the NiOx buffer layer. The conduction mechanisms of the BTO/Ni heterostructure have been discussed according to the J-V characteristic curves.http://dx.doi.org/10.1155/2015/167569
collection DOAJ
language English
format Article
sources DOAJ
author Hui Du
Yang Li
Wei Zheng Liang
Yu Xuan Wang
Min Gao
Wen Huang
Yin Zhang
Yuan Lin
spellingShingle Hui Du
Yang Li
Wei Zheng Liang
Yu Xuan Wang
Min Gao
Wen Huang
Yin Zhang
Yuan Lin
Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition
Journal of Nanomaterials
author_facet Hui Du
Yang Li
Wei Zheng Liang
Yu Xuan Wang
Min Gao
Wen Huang
Yin Zhang
Yuan Lin
author_sort Hui Du
title Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition
title_short Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition
title_full Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition
title_fullStr Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition
title_full_unstemmed Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition
title_sort impact of niox buffer layers on the dielectric properties of batio3 thin films on nickel substrates fabricated by polymer assisted deposition
publisher Hindawi Limited
series Journal of Nanomaterials
issn 1687-4110
1687-4129
publishDate 2015-01-01
description Structural health monitoring with piezoelectric thin films integrated on structural metals shows great advantages for potential applications. However, the integration of piezoelectric thin films on structure metals is still challenged. In this paper, we report the piezoelectric barium titanate [BaTiO3 (BTO)] thin films deposited on polycrystalline Ni substrates by the polymer assisted deposition (PAD) method using NiOx as the buffer layers. The NiOx buffer layers with different thicknesses were prepared by varying immersing time from 5 minutes to 4 hours in H2O2 solution. The dielectric and leakage current properties of the thin films have been studied by general test systems. The BTO/Ni heterostructure with 2-hour immersing time exhibits better dielectric properties with a dielectric constant over 1500 and a 34.8% decrease of the dielectric loss compared to that with 5-minute immersing time. The results show that the leakage current density is strongly affected by the thickness of the NiOx buffer layer. The conduction mechanisms of the BTO/Ni heterostructure have been discussed according to the J-V characteristic curves.
url http://dx.doi.org/10.1155/2015/167569
work_keys_str_mv AT huidu impactofnioxbufferlayersonthedielectricpropertiesofbatio3thinfilmsonnickelsubstratesfabricatedbypolymerassisteddeposition
AT yangli impactofnioxbufferlayersonthedielectricpropertiesofbatio3thinfilmsonnickelsubstratesfabricatedbypolymerassisteddeposition
AT weizhengliang impactofnioxbufferlayersonthedielectricpropertiesofbatio3thinfilmsonnickelsubstratesfabricatedbypolymerassisteddeposition
AT yuxuanwang impactofnioxbufferlayersonthedielectricpropertiesofbatio3thinfilmsonnickelsubstratesfabricatedbypolymerassisteddeposition
AT mingao impactofnioxbufferlayersonthedielectricpropertiesofbatio3thinfilmsonnickelsubstratesfabricatedbypolymerassisteddeposition
AT wenhuang impactofnioxbufferlayersonthedielectricpropertiesofbatio3thinfilmsonnickelsubstratesfabricatedbypolymerassisteddeposition
AT yinzhang impactofnioxbufferlayersonthedielectricpropertiesofbatio3thinfilmsonnickelsubstratesfabricatedbypolymerassisteddeposition
AT yuanlin impactofnioxbufferlayersonthedielectricpropertiesofbatio3thinfilmsonnickelsubstratesfabricatedbypolymerassisteddeposition
_version_ 1725384015255437312

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