Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation

Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation

The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes....

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Bibliographic Details
Main Authors: Gromov Dmitry, Elesin Vadim
Format: Article
Language:English
Published: EDP Sciences 2019-01-01
Series:ITM Web of Conferences
Online Access:https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_10005.pdf
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spelling doaj-925c4c3deab243aeac282fb2cd64342f2021-02-02T07:08:53ZengEDP SciencesITM Web of Conferences2271-20972019-01-01301000510.1051/itmconf/20193010005itmconf_crimico2019_10005Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiationGromov DmitryElesin VadimThe investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes. It has been demonstrated that GaAs MESFET, pHEMT and RTDs may show the long-term parameter recovery undo pulsed ionizing exposure.https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_10005.pdf
collection DOAJ
language English
format Article
sources DOAJ
author Gromov Dmitry
Elesin Vadim
spellingShingle Gromov Dmitry
Elesin Vadim
Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation
ITM Web of Conferences
author_facet Gromov Dmitry
Elesin Vadim
author_sort Gromov Dmitry
title Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation
title_short Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation
title_full Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation
title_fullStr Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation
title_full_unstemmed Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation
title_sort long-term radiation effects in gaas microwave devices exposed to pulsed ionizing radiation
publisher EDP Sciences
series ITM Web of Conferences
issn 2271-2097
publishDate 2019-01-01
description The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes. It has been demonstrated that GaAs MESFET, pHEMT and RTDs may show the long-term parameter recovery undo pulsed ionizing exposure.
url https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_10005.pdf
work_keys_str_mv AT gromovdmitry longtermradiationeffectsingaasmicrowavedevicesexposedtopulsedionizingradiation
AT elesinvadim longtermradiationeffectsingaasmicrowavedevicesexposedtopulsedionizingradiation
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