Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation
The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes....
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2019-01-01
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| Series: | ITM Web of Conferences |
| Online Access: | https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_10005.pdf |
| Summary: | The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes. It has been demonstrated that GaAs MESFET, pHEMT and RTDs may show the long-term parameter recovery undo pulsed ionizing exposure. |
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| ISSN: | 2271-2097 |