An Amorphous Silicon Photo TFT with Si3N4/Al2O3 or HfO2 Double Layered Insulator for Digital Imaging Applications
Abstract This paper focuses on amorphous silicon photo thin-film transistors with double layered insulator using Si3N4/Al2O3 or HfO2 as candidates for the succession of Si3N4 as a traditional insulator in the fabrication of hydrogenated amorphous silicon thin-film transistors. Whether for industry o...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Sociedade Brasileira de Microondas e Optoeletrônica; Sociedade Brasileira de Eletromagnetismo
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| Series: | Journal of Microwaves, Optoelectronics and Electromagnetic Applications |
| Subjects: | |
| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742019000100043&lng=en&tlng=en |