Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and r...

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Main Authors: Wang Lan, Lin Xianzhong, Ennaoui Ahmed, Wolf Christian, Lux-Steiner Martha Ch., Klenk Reiner
Format: Article
Language:English
Published: EDP Sciences 2016-01-01
Series:EPJ Photovoltaics
Online Access:http://dx.doi.org/10.1051/epjpv/2016001
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spelling doaj-920d88be0a5f4b918c0ae35e9c21d5552021-02-02T02:02:07ZengEDP SciencesEPJ Photovoltaics2105-07162016-01-0177030310.1051/epjpv/2016001pv150016Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cellsWang Lan0Lin Xianzhong1Ennaoui Ahmed2Wolf Christian3Lux-Steiner Martha Ch.Klenk Reiner4Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1Qatar Environment and Energy Research Institute and Hamad Bin Khalifa University, Education CityHelmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.http://dx.doi.org/10.1051/epjpv/2016001
collection DOAJ
language English
format Article
sources DOAJ
author Wang Lan
Lin Xianzhong
Ennaoui Ahmed
Wolf Christian
Lux-Steiner Martha Ch.
Klenk Reiner
spellingShingle Wang Lan
Lin Xianzhong
Ennaoui Ahmed
Wolf Christian
Lux-Steiner Martha Ch.
Klenk Reiner
Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells
EPJ Photovoltaics
author_facet Wang Lan
Lin Xianzhong
Ennaoui Ahmed
Wolf Christian
Lux-Steiner Martha Ch.
Klenk Reiner
author_sort Wang Lan
title Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells
title_short Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells
title_full Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells
title_fullStr Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells
title_full_unstemmed Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells
title_sort solution-processed in2s3 buffer layer for chalcopyrite thin film solar cells
publisher EDP Sciences
series EPJ Photovoltaics
issn 2105-0716
publishDate 2016-01-01
description We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.
url http://dx.doi.org/10.1051/epjpv/2016001
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AT wolfchristian solutionprocessedin2s3bufferlayerforchalcopyritethinfilmsolarcells
AT luxsteinermarthach solutionprocessedin2s3bufferlayerforchalcopyritethinfilmsolarcells
AT klenkreiner solutionprocessedin2s3bufferlayerforchalcopyritethinfilmsolarcells
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