Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors

• Main Authors: Yu-Ru Lin, Yu-Hsien Lin, Yi-Yun Yang, Yung-Chun Wu
• Format: Article
• Language: English
• Published: IEEE 2019-01-01
• Series: IEEE Journal of the Electron Devices Society
• Subjects: Gate-all-around (GAA); junctionless (JL); nanosheet (NS); stacked structure; thin-film transistor (TFT)
• Online Access: https://ieeexplore.ieee.org/document/8811513/

As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and compared the electrical characteristics of single-NS and stacked-NS structures. The performance of the multi-gate and gate-all-around transistors was then further analyzed. The stacked gate-all-around thin-film transistor exhibited superior performance and excellent temperature design flexibility. In brief, the stacked gate-all-around structure for thin-film transistors structure has the potential to overcome the challenges associated with downscaling.