Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction

Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction

It is known that the commercialized white light-emitting diodes (WLEDs) depend on phosphor conversion, which is limited by the unbalanced carrier injection in multiple quantum wells (MQWs) and low down-conversion efficiency. To solve these problems, hybrid organic/inorganic III-nitride WLEDs were de...

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Main Authors: Danbei Wang, Bin Liu, Hongmei Zhang, Hong Zhao, Tao Tao, Zili Xie, Rong Zhang, Youdou Zheng
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Photonics Journal
Subjects:
III-nitrides
organic materials
p-n junction
light emitting diodes
white electroluminescence
hole transport layer
Online Access:https://ieeexplore.ieee.org/document/8753590/
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spelling doaj-915d52cd65f349e3873456b01c9c7b272021-03-29T17:56:01ZengIEEEIEEE Photonics Journal1943-06552019-01-011141810.1109/JPHOT.2019.29262318753590Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N JunctionDanbei Wang0https://orcid.org/0000-0002-8452-1369Bin Liu1https://orcid.org/0000-0002-2393-9147Hongmei Zhang2Hong Zhao3Tao Tao4Zili Xie5Rong Zhang6Youdou Zheng7Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaInstitute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaIt is known that the commercialized white light-emitting diodes (WLEDs) depend on phosphor conversion, which is limited by the unbalanced carrier injection in multiple quantum wells (MQWs) and low down-conversion efficiency. To solve these problems, hybrid organic/inorganic III-nitride WLEDs were designed and fabricated based on Rubrene/(InGaN/GaN) MQWs p-n junction. In such new structure, Rubrene can act as yellow-red emitter and play an important role in hole transport layer owing to its high carrier mobility. By optimizing the hybrid LED structure, the charge balance and recombination zone in radiative region were significantly improved. In this work, the optimal hybrid WLED with color coordinates of (0.31, 0.33) shows a maximum current efficiency of 15.22 cd/A with excellent long lifetime stability. The hybrid WLEDs based on organic/inorganic p-n junction were demonstrated with a good performance, which provides an attractive route to achieve high performance phosphor-free WLED sources for microdisplay or large-area WLED applications.https://ieeexplore.ieee.org/document/8753590/III-nitridesorganic materialsp-n junctionlight emitting diodeswhite electroluminescencehole transport layer
collection DOAJ
language English
format Article
sources DOAJ
author Danbei Wang
Bin Liu
Hongmei Zhang
Hong Zhao
Tao Tao
Zili Xie
Rong Zhang
Youdou Zheng
spellingShingle Danbei Wang
Bin Liu
Hongmei Zhang
Hong Zhao
Tao Tao
Zili Xie
Rong Zhang
Youdou Zheng
Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction
IEEE Photonics Journal
III-nitrides
organic materials
p-n junction
light emitting diodes
white electroluminescence
hole transport layer
author_facet Danbei Wang
Bin Liu
Hongmei Zhang
Hong Zhao
Tao Tao
Zili Xie
Rong Zhang
Youdou Zheng
author_sort Danbei Wang
title Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction
title_short Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction
title_full Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction
title_fullStr Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction
title_full_unstemmed Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction
title_sort electrically injected hybrid organic/inorganic iii-nitride white light-emitting diodes based on rubrene/(ingan/gan) multiple-quantum-wells p-n junction
publisher IEEE
series IEEE Photonics Journal
issn 1943-0655
publishDate 2019-01-01
description It is known that the commercialized white light-emitting diodes (WLEDs) depend on phosphor conversion, which is limited by the unbalanced carrier injection in multiple quantum wells (MQWs) and low down-conversion efficiency. To solve these problems, hybrid organic/inorganic III-nitride WLEDs were designed and fabricated based on Rubrene/(InGaN/GaN) MQWs p-n junction. In such new structure, Rubrene can act as yellow-red emitter and play an important role in hole transport layer owing to its high carrier mobility. By optimizing the hybrid LED structure, the charge balance and recombination zone in radiative region were significantly improved. In this work, the optimal hybrid WLED with color coordinates of (0.31, 0.33) shows a maximum current efficiency of 15.22 cd/A with excellent long lifetime stability. The hybrid WLEDs based on organic/inorganic p-n junction were demonstrated with a good performance, which provides an attractive route to achieve high performance phosphor-free WLED sources for microdisplay or large-area WLED applications.
topic III-nitrides
organic materials
p-n junction
light emitting diodes
white electroluminescence
hole transport layer
url https://ieeexplore.ieee.org/document/8753590/
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