FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODE

FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODE

The results of porous silicon formation by anodization of single crystalline silicon wafers in the pulsed galvanostatic mode are presented. Correlations between pore structure and anodization process parameters were determined. It was shown, that porous silicon layers formed in pulsed mode have more...

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Bibliographic Details
Main Authors: E. B. Chubenko, S. V. Redko, A. I. Sherstnyov, V. A. Petrovich, V. P. Bondarenko
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
пористый кремний
импульсное электрохимическое анодирование
полупроводниковая пористая матрица
Online Access:https://doklady.bsuir.by/jour/article/view/484

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