Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS

Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS

<p class="ArticleAnnotation"><span lang="EN-US">Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium ar...

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Main Authors: S. P. Novosyadlyi, V. S. Huzik
Format: Article
Language:English
Published: Vasyl Stefanyk Precarpathian National University 2016-10-01
Series:Фізика і хімія твердого тіла
Online Access:http://journals.pu.if.ua/index.php/pcss/article/view/803
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spelling doaj-90155ff0f99c4963a26b534374c696a72020-11-25T00:14:28ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892016-10-0116359960510.15330/pcss.16.3.599-605672Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BISS. P. Novosyadlyi0V. S. Huzik1Прикарпатський національний університет імені Василя СтефаникаПрикарпатський національний університет імені Василя Стефаника<p class="ArticleAnnotation"><span lang="EN-US">Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge carrier mobility with a frequency range of operation of reach for chips based on silicon (Si).</span></p> <p class="ArticleAnnotation"><strong><span lang="EN-US">Keywords:</span></strong><span lang="EN-US"> super beta-transistor, heterostructure, gallium arsenide, silicon, reactors electron-cyclotron resonance.</span></p>http://journals.pu.if.ua/index.php/pcss/article/view/803
collection DOAJ
language English
format Article
sources DOAJ
author S. P. Novosyadlyi
V. S. Huzik
spellingShingle S. P. Novosyadlyi
V. S. Huzik
Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS
Фізика і хімія твердого тіла
author_facet S. P. Novosyadlyi
V. S. Huzik
author_sort S. P. Novosyadlyi
title Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS
title_short Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS
title_full Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS
title_fullStr Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS
title_full_unstemmed Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS
title_sort computer simulation of gallium arsenide super beta transistors heterostructures for high-speed bis
publisher Vasyl Stefanyk Precarpathian National University
series Фізика і хімія твердого тіла
issn 1729-4428
2309-8589
publishDate 2016-10-01
description <p class="ArticleAnnotation"><span lang="EN-US">Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge carrier mobility with a frequency range of operation of reach for chips based on silicon (Si).</span></p> <p class="ArticleAnnotation"><strong><span lang="EN-US">Keywords:</span></strong><span lang="EN-US"> super beta-transistor, heterostructure, gallium arsenide, silicon, reactors electron-cyclotron resonance.</span></p>
url http://journals.pu.if.ua/index.php/pcss/article/view/803
work_keys_str_mv AT spnovosyadlyi computersimulationofgalliumarsenidesuperbetatransistorsheterostructuresforhighspeedbis
AT vshuzik computersimulationofgalliumarsenidesuperbetatransistorsheterostructuresforhighspeedbis
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