Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS
<p class="ArticleAnnotation"><span lang="EN-US">Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium ar...
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2016-10-01
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| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/803 |
| Summary: | <p class="ArticleAnnotation"><span lang="EN-US">Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge carrier mobility with a frequency range of operation of reach for chips based on silicon (Si).</span></p> <p class="ArticleAnnotation"><strong><span lang="EN-US">Keywords:</span></strong><span lang="EN-US"> super beta-transistor, heterostructure, gallium arsenide, silicon, reactors electron-cyclotron resonance.</span></p> |
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| ISSN: | 1729-4428 2309-8589 |