Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires
We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP) relaxation and Elliott-Yafet (EY) relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk invers...
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2012-03-01
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Online Access: | http://dx.doi.org/10.1063/1.3694892 |
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doaj-9005dd1764bc42bc9583e0653039b9982020-11-25T00:26:38ZengAIP Publishing LLCAIP Advances2158-32262012-03-0121012165012165-910.1063/1.3694892067201ADVSemiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowiresAshish Kumar0M. W. Akram1Bahniman Ghosh2Department of Electrical Engineering, Indian Institute of Technology, Kanpur 208016, IndiaDepartment of Electrical Engineering, Indian Institute of Technology, Kanpur 208016, IndiaDepartment of Electrical Engineering, Indian Institute of Technology, Kanpur 208016, India We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP) relaxation and Elliott-Yafet (EY) relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction) and structural inversion asymmetry (Rashba spin-orbit interaction). The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires. http://dx.doi.org/10.1063/1.3694892 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Ashish Kumar M. W. Akram Bahniman Ghosh |
spellingShingle |
Ashish Kumar M. W. Akram Bahniman Ghosh Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires AIP Advances |
author_facet |
Ashish Kumar M. W. Akram Bahniman Ghosh |
author_sort |
Ashish Kumar |
title |
Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires |
title_short |
Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires |
title_full |
Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires |
title_fullStr |
Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires |
title_full_unstemmed |
Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires |
title_sort |
semiclassical monte carlo simulation studies of spin dephasing in inp and insb nanowires |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2012-03-01 |
description |
We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP) relaxation and Elliott-Yafet (EY) relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction) and structural inversion asymmetry (Rashba spin-orbit interaction). The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires.
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url |
http://dx.doi.org/10.1063/1.3694892 |
work_keys_str_mv |
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