Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires

We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP) relaxation and Elliott-Yafet (EY) relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk invers...

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Main Authors: Ashish Kumar, M. W. Akram, Bahniman Ghosh
Format: Article
Language:English
Published: AIP Publishing LLC 2012-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.3694892
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spelling doaj-9005dd1764bc42bc9583e0653039b9982020-11-25T00:26:38ZengAIP Publishing LLCAIP Advances2158-32262012-03-0121012165012165-910.1063/1.3694892067201ADVSemiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowiresAshish Kumar0M. W. Akram1Bahniman Ghosh2Department of Electrical Engineering, Indian Institute of Technology, Kanpur 208016, IndiaDepartment of Electrical Engineering, Indian Institute of Technology, Kanpur 208016, IndiaDepartment of Electrical Engineering, Indian Institute of Technology, Kanpur 208016, India We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP) relaxation and Elliott-Yafet (EY) relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction) and structural inversion asymmetry (Rashba spin-orbit interaction). The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires. http://dx.doi.org/10.1063/1.3694892
collection DOAJ
language English
format Article
sources DOAJ
author Ashish Kumar
M. W. Akram
Bahniman Ghosh
spellingShingle Ashish Kumar
M. W. Akram
Bahniman Ghosh
Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires
AIP Advances
author_facet Ashish Kumar
M. W. Akram
Bahniman Ghosh
author_sort Ashish Kumar
title Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires
title_short Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires
title_full Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires
title_fullStr Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires
title_full_unstemmed Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires
title_sort semiclassical monte carlo simulation studies of spin dephasing in inp and insb nanowires
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2012-03-01
description We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP) relaxation and Elliott-Yafet (EY) relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction) and structural inversion asymmetry (Rashba spin-orbit interaction). The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires.
url http://dx.doi.org/10.1063/1.3694892
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AT mwakram semiclassicalmontecarlosimulationstudiesofspindephasingininpandinsbnanowires
AT bahnimanghosh semiclassicalmontecarlosimulationstudiesofspindephasingininpandinsbnanowires
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