GaN based negative capacitance heterojunction field-effect transistors with <30 mV/dec subthreshold slope for steep switching operation
We demonstrated gallium nitride (GaN) based negative capacitance field-effect transistors (NCFETs) that achieve steep switching operation. Ferroelectric phase characteristics were successfully demonstrated using a 10 nm thick undoped-HfO2 ferroelectric thin film fabricated through atomic layer depos...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2020-03-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379719336241 |