Contactless Determination of Electric Field in Metal–Insulator–Semiconductor Interfaces by Using Constant DC-Reflectivity Photoreflectance

Contactless Determination of Electric Field in Metal–Insulator–Semiconductor Interfaces by Using Constant DC-Reflectivity Photoreflectance

We applied photoreflectance (PR) spectroscopy for contactless determination of the electric field strength at buried interfaces in metal–insulator–semiconductor (MIS) structures. The PR is an all-optical version of an electromodulated reflectance spectroscopy. The tradeoff of this adoption is that t...

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Bibliographic Details
Main Authors: Eiichi Kobayashi, Koya Satta, Ryoga Inoue, Ken Suzuki, Takayuki Makino
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Solids
Subjects:
optical properties
interface science
instrumentation
Online Access:https://www.mdpi.com/2673-6497/2/2/8
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spelling doaj-8fc7eda812a84d2390062df313e9779f2021-09-09T13:57:08ZengMDPI AGSolids2673-64972021-03-012812913810.3390/solids2020008Contactless Determination of Electric Field in Metal–Insulator–Semiconductor Interfaces by Using Constant DC-Reflectivity PhotoreflectanceEiichi Kobayashi0Koya Satta1Ryoga Inoue2Ken Suzuki3Takayuki Makino4Advanced Interdisciplinary Science and Technology, Graduate School of Engineering, University of Fukui, Fukui 910-8507, JapanDepartment of Electric and Electronics Engineering, University of Fukui, Fukui 910-8507, JapanDepartment of Electric and Electronics Engineering, University of Fukui, Fukui 910-8507, JapanDepartment of Electric and Electronics Engineering, University of Fukui, Fukui 910-8507, JapanResearch Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507, JapanWe applied photoreflectance (PR) spectroscopy for contactless determination of the electric field strength at buried interfaces in metal–insulator–semiconductor (MIS) structures. The PR is an all-optical version of an electromodulated reflectance spectroscopy. The tradeoff of this adoption is that this requires an additional feedback system to eliminate background problems induced by scattered pump light and/or photoluminescence. A microcomputer-based feedback system has been developed for this elimination. Despite the very tiny signal intensity, we successfully attained a sufficiently good signal–noise ratio to determine the electric field strength in oxide-based MIS interfaces that exhibits a large, unwanted photoluminescence signal. The field strength was evaluated to be ca. 0.25 kV/cm.https://www.mdpi.com/2673-6497/2/2/8optical propertiesinterface scienceinstrumentation
collection DOAJ
language English
format Article
sources DOAJ
author Eiichi Kobayashi
Koya Satta
Ryoga Inoue
Ken Suzuki
Takayuki Makino
spellingShingle Eiichi Kobayashi
Koya Satta
Ryoga Inoue
Ken Suzuki
Takayuki Makino
Contactless Determination of Electric Field in Metal–Insulator–Semiconductor Interfaces by Using Constant DC-Reflectivity Photoreflectance
Solids
optical properties
interface science
instrumentation
author_facet Eiichi Kobayashi
Koya Satta
Ryoga Inoue
Ken Suzuki
Takayuki Makino
author_sort Eiichi Kobayashi
title Contactless Determination of Electric Field in Metal–Insulator–Semiconductor Interfaces by Using Constant DC-Reflectivity Photoreflectance
title_short Contactless Determination of Electric Field in Metal–Insulator–Semiconductor Interfaces by Using Constant DC-Reflectivity Photoreflectance
title_full Contactless Determination of Electric Field in Metal–Insulator–Semiconductor Interfaces by Using Constant DC-Reflectivity Photoreflectance
title_fullStr Contactless Determination of Electric Field in Metal–Insulator–Semiconductor Interfaces by Using Constant DC-Reflectivity Photoreflectance
title_full_unstemmed Contactless Determination of Electric Field in Metal–Insulator–Semiconductor Interfaces by Using Constant DC-Reflectivity Photoreflectance
title_sort contactless determination of electric field in metal–insulator–semiconductor interfaces by using constant dc-reflectivity photoreflectance
publisher MDPI AG
series Solids
issn 2673-6497
publishDate 2021-03-01
description We applied photoreflectance (PR) spectroscopy for contactless determination of the electric field strength at buried interfaces in metal–insulator–semiconductor (MIS) structures. The PR is an all-optical version of an electromodulated reflectance spectroscopy. The tradeoff of this adoption is that this requires an additional feedback system to eliminate background problems induced by scattered pump light and/or photoluminescence. A microcomputer-based feedback system has been developed for this elimination. Despite the very tiny signal intensity, we successfully attained a sufficiently good signal–noise ratio to determine the electric field strength in oxide-based MIS interfaces that exhibits a large, unwanted photoluminescence signal. The field strength was evaluated to be ca. 0.25 kV/cm.
topic optical properties
interface science
instrumentation
url https://www.mdpi.com/2673-6497/2/2/8
work_keys_str_mv AT eiichikobayashi contactlessdeterminationofelectricfieldinmetalinsulatorsemiconductorinterfacesbyusingconstantdcreflectivityphotoreflectance
AT koyasatta contactlessdeterminationofelectricfieldinmetalinsulatorsemiconductorinterfacesbyusingconstantdcreflectivityphotoreflectance
AT ryogainoue contactlessdeterminationofelectricfieldinmetalinsulatorsemiconductorinterfacesbyusingconstantdcreflectivityphotoreflectance
AT kensuzuki contactlessdeterminationofelectricfieldinmetalinsulatorsemiconductorinterfacesbyusingconstantdcreflectivityphotoreflectance
AT takayukimakino contactlessdeterminationofelectricfieldinmetalinsulatorsemiconductorinterfacesbyusingconstantdcreflectivityphotoreflectance
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