Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking Voltage

Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking Voltage

Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 &#x03BC;A/cm<sup>2</sup> at 1250 V), excellent forward characteristics (ideality factor 1.6), and low specific on-resistance (1.1 m&#x03A9;.cm<sup>2</sup>...

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Bibliographic Details
Main Authors: Andrew M. Armstrong, Andrew A. Allerman, Greg W. Pickrell, Mary H. Crawford, Caleb E. Glaser, Trevor Smith
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Gallium nitride
p-n junctions
power semiconductor devices
epitaxial growth
Online Access:https://ieeexplore.ieee.org/document/9359663/

Internet

https://ieeexplore.ieee.org/document/9359663/

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