A New Method for 2D Materials Properties Modulation by Controlled Induced Mechanical Strain

This paper proposes a new method for characterization of 2D materials under the precisely specified conditions. It is achieved by integration of a 2D material as a field effect transistors structures with a piezoelectric resonator. Properties of the 2D material can be mechanically adjusted by the re...

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Main Authors: Imrich Gablech, Jan Pekárek, Jaroslav Klempa, Petr Vyroubal, Vojtěch Svatoš, and Pavel Neužil
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Proceedings
Subjects:
Online Access:https://www.mdpi.com/2504-3900/2/13/1513
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spelling doaj-8e476f8e636f4b5aa2fad1d93b1dcc3e2020-11-24T21:21:45ZengMDPI AGProceedings2504-39002018-12-01213151310.3390/proceedings2131513proceedings2131513A New Method for 2D Materials Properties Modulation by Controlled Induced Mechanical StrainImrich Gablech0Jan Pekárek1Jaroslav Klempa2Petr Vyroubal3Vojtěch Svatoš4and Pavel Neužil5Brno University of Technology, Faculty of Electrical Engineering and Communication, Technická 3058/10, 616 00 Brno, Czech RepublicBrno University of Technology, Faculty of Electrical Engineering and Communication, Technická 3058/10, 616 00 Brno, Czech RepublicBrno University of Technology, Faculty of Electrical Engineering and Communication, Technická 3058/10, 616 00 Brno, Czech RepublicBrno University of Technology, Faculty of Electrical Engineering and Communication, Technická 3058/10, 616 00 Brno, Czech RepublicBrno University of Technology, Faculty of Electrical Engineering and Communication, Technická 3058/10, 616 00 Brno, Czech RepublicNorthwestern Polytechnical University, Department of Microsystem Engineering, 127 West Youyi Road, Xi’an 710072, ChinaThis paper proposes a new method for characterization of 2D materials under the precisely specified conditions. It is achieved by integration of a 2D material as a field effect transistors structures with a piezoelectric resonator. Properties of the 2D material can be mechanically adjusted by the resonator. It results in the independent and precise control of an amplitude of induced mechanical strain, its modulating frequency, which all influence the 2D material properties. The electrical field required to measure 2D material field effect transistors will not be affected by the vibrations, thus giving us a chance to perform the precise measurement of the electrical properties of the 2D material. This approach has a great potential for measuring and monitoring cells, enzymes, nucleic acids, deoxyribonucleic acid and ribonucleic acid. It can be also used for measurement of toxic, combustive or waste gases.https://www.mdpi.com/2504-3900/2/13/15132D materialsinduced strainpiezoelectric resonatorFET structure
collection DOAJ
language English
format Article
sources DOAJ
author Imrich Gablech
Jan Pekárek
Jaroslav Klempa
Petr Vyroubal
Vojtěch Svatoš
and Pavel Neužil
spellingShingle Imrich Gablech
Jan Pekárek
Jaroslav Klempa
Petr Vyroubal
Vojtěch Svatoš
and Pavel Neužil
A New Method for 2D Materials Properties Modulation by Controlled Induced Mechanical Strain
Proceedings
2D materials
induced strain
piezoelectric resonator
FET structure
author_facet Imrich Gablech
Jan Pekárek
Jaroslav Klempa
Petr Vyroubal
Vojtěch Svatoš
and Pavel Neužil
author_sort Imrich Gablech
title A New Method for 2D Materials Properties Modulation by Controlled Induced Mechanical Strain
title_short A New Method for 2D Materials Properties Modulation by Controlled Induced Mechanical Strain
title_full A New Method for 2D Materials Properties Modulation by Controlled Induced Mechanical Strain
title_fullStr A New Method for 2D Materials Properties Modulation by Controlled Induced Mechanical Strain
title_full_unstemmed A New Method for 2D Materials Properties Modulation by Controlled Induced Mechanical Strain
title_sort new method for 2d materials properties modulation by controlled induced mechanical strain
publisher MDPI AG
series Proceedings
issn 2504-3900
publishDate 2018-12-01
description This paper proposes a new method for characterization of 2D materials under the precisely specified conditions. It is achieved by integration of a 2D material as a field effect transistors structures with a piezoelectric resonator. Properties of the 2D material can be mechanically adjusted by the resonator. It results in the independent and precise control of an amplitude of induced mechanical strain, its modulating frequency, which all influence the 2D material properties. The electrical field required to measure 2D material field effect transistors will not be affected by the vibrations, thus giving us a chance to perform the precise measurement of the electrical properties of the 2D material. This approach has a great potential for measuring and monitoring cells, enzymes, nucleic acids, deoxyribonucleic acid and ribonucleic acid. It can be also used for measurement of toxic, combustive or waste gases.
topic 2D materials
induced strain
piezoelectric resonator
FET structure
url https://www.mdpi.com/2504-3900/2/13/1513
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