Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

The electrical transport behavior of n-n indium nitride nanodot-silicon (InN ND-Si) heterostructure Schottky diodes is reported here, which have been fabricated by plasma-assisted molecular beam epitaxy. InN ND structures were grown on a 20 nm InN buffer layer on Si substrates. These dots were found...

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Bibliographic Details
Main Authors:	Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, A. T. Kalghatgi, S. B. Krupanidhi
Format:	Article
Language:	English
Published:	Hindawi Limited 2011-01-01
Series:	Journal of Nanomaterials
Online Access:	http://dx.doi.org/10.1155/2011/189731

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