Polycrystalline Co2Fe0.4Mn0.6Si Heusler alloy thin films with high B2 ordering and small magnetic anisotropy for magnetic tunnel junction based sensors

Polycrystalline Co2Fe0.4Mn0.6Si Heusler alloy thin films with high B2 ordering and small magnetic anisotropy for magnetic tunnel junction based sensors

To measure the bio magnetic field from the heart and brain at room temperature, the magnetic tunnel junctions (MTJs) based sensor is required to achieve a high sensitivity which is defined as the TMR ratio/2Hk (where Hk is anisotropic magnetic field of the free layer). To realize both high TMR ratio...

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Main Authors: Nana Kudo, Mikihiko Oogane, Masakiyo Tsunoda, Yasuo Ando
Format: Article
Language:English
Published: AIP Publishing LLC 2019-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5130461
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spelling doaj-8d229c6f2ed241a8b98da5aef6974b0b2020-11-25T00:13:57ZengAIP Publishing LLCAIP Advances2158-32262019-12-01912125036125036-410.1063/1.5130461Polycrystalline Co2Fe0.4Mn0.6Si Heusler alloy thin films with high B2 ordering and small magnetic anisotropy for magnetic tunnel junction based sensorsNana Kudo0Mikihiko Oogane1Masakiyo Tsunoda2Yasuo Ando3Department of Applied Physics, Tohoku University, Sendai 980-8579, JapanDepartment of Applied Physics, Tohoku University, Sendai 980-8579, JapanCenter for Spintronics Research Network, Tohoku University, Sendai 980-8577, JapanDepartment of Applied Physics, Tohoku University, Sendai 980-8579, JapanTo measure the bio magnetic field from the heart and brain at room temperature, the magnetic tunnel junctions (MTJs) based sensor is required to achieve a high sensitivity which is defined as the TMR ratio/2Hk (where Hk is anisotropic magnetic field of the free layer). To realize both high TMR ratio and small Hk, we employed (001)-oriented polycrystalline Co-based Heusler alloy material (Co2Fe0.4Mn0.6Si) for the free layer which is known for its high spin polarization and small Hk. In this study, we optimized the crystal and magnetic properties of Co2Fe0.4Mn0.6Si free layer and succeeded in reducing Hk in polycrystalline CFMS free layer with high B2 ordering. We also demonstrated the linear output of TMR in MTJs fabricated under the optimized condition.http://dx.doi.org/10.1063/1.5130461
collection DOAJ
language English
format Article
sources DOAJ
author Nana Kudo
Mikihiko Oogane
Masakiyo Tsunoda
Yasuo Ando
spellingShingle Nana Kudo
Mikihiko Oogane
Masakiyo Tsunoda
Yasuo Ando
Polycrystalline Co2Fe0.4Mn0.6Si Heusler alloy thin films with high B2 ordering and small magnetic anisotropy for magnetic tunnel junction based sensors
AIP Advances
author_facet Nana Kudo
Mikihiko Oogane
Masakiyo Tsunoda
Yasuo Ando
author_sort Nana Kudo
title Polycrystalline Co2Fe0.4Mn0.6Si Heusler alloy thin films with high B2 ordering and small magnetic anisotropy for magnetic tunnel junction based sensors
title_short Polycrystalline Co2Fe0.4Mn0.6Si Heusler alloy thin films with high B2 ordering and small magnetic anisotropy for magnetic tunnel junction based sensors
title_full Polycrystalline Co2Fe0.4Mn0.6Si Heusler alloy thin films with high B2 ordering and small magnetic anisotropy for magnetic tunnel junction based sensors
title_fullStr Polycrystalline Co2Fe0.4Mn0.6Si Heusler alloy thin films with high B2 ordering and small magnetic anisotropy for magnetic tunnel junction based sensors
title_full_unstemmed Polycrystalline Co2Fe0.4Mn0.6Si Heusler alloy thin films with high B2 ordering and small magnetic anisotropy for magnetic tunnel junction based sensors
title_sort polycrystalline co2fe0.4mn0.6si heusler alloy thin films with high b2 ordering and small magnetic anisotropy for magnetic tunnel junction based sensors
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2019-12-01
description To measure the bio magnetic field from the heart and brain at room temperature, the magnetic tunnel junctions (MTJs) based sensor is required to achieve a high sensitivity which is defined as the TMR ratio/2Hk (where Hk is anisotropic magnetic field of the free layer). To realize both high TMR ratio and small Hk, we employed (001)-oriented polycrystalline Co-based Heusler alloy material (Co2Fe0.4Mn0.6Si) for the free layer which is known for its high spin polarization and small Hk. In this study, we optimized the crystal and magnetic properties of Co2Fe0.4Mn0.6Si free layer and succeeded in reducing Hk in polycrystalline CFMS free layer with high B2 ordering. We also demonstrated the linear output of TMR in MTJs fabricated under the optimized condition.
url http://dx.doi.org/10.1063/1.5130461
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AT mikihikooogane polycrystallineco2fe04mn06siheusleralloythinfilmswithhighb2orderingandsmallmagneticanisotropyformagnetictunneljunctionbasedsensors
AT masakiyotsunoda polycrystallineco2fe04mn06siheusleralloythinfilmswithhighb2orderingandsmallmagneticanisotropyformagnetictunneljunctionbasedsensors
AT yasuoando polycrystallineco2fe04mn06siheusleralloythinfilmswithhighb2orderingandsmallmagneticanisotropyformagnetictunneljunctionbasedsensors
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