Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity

Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity

Obtaining high quality, wurtzite InN films with p-type conductivity is a challenge, and there is limited information about the photoluminescence (PL) characteristics of such films. In this study, we present a comprehensive PL study and discuss in detail the recombination processes in Mg-doped InN fi...

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Bibliographic Details
Main Authors: M. O. Eriksson, S. Khromov, P. P. Paskov, X. Wang, A. Yoshikawa, P. O. Holtz, B. Monemar, V. Darakchieva
Format: Article
Language:English
Published: AIP Publishing LLC 2019-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5052432

Internet

http://dx.doi.org/10.1063/1.5052432

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