Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures

• Main Authors: Evgeny Pikhay, Yakov Roizin, Yael Nemirovsky
• Format: Article
• Language: English
• Published: MDPI AG 2017-07-01
• Series: Journal of Low Power Electronics and Applications
• Subjects: radiation sensor; floating gate; CMOS; semiconductor; energetic ions; Gamma; X-ray; UV
• Online Access: https://www.mdpi.com/2079-9268/7/3/20

In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sensors. The developed devices are intended for total ionizing dose (TID) measurements and fabricated in a standard CMOS process flow. Sensor design and operation is discussed in detail. Original array sensors were suggested and fabricated that allowed high statistical significance of the radiation measurements and radiation imaging functions. Single sensors and array sensors were analyzed in combination with the specially developed test structures. This allowed insight into the physics of sensor operations and exclusion of the phenomena related to material degradation under irradiation in the interpretation of the measurement results. Response of the developed sensors to various sources of ionizing radiation (Gamma, X-ray, UV, energetic ions) was investigated. The optimal design of sensor for implementation in dosimetry systems was suggested. The roadmap for future improvement of sensor performance is suggested.