Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability

Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability

In the scaling of semiconductor devices, evolutionary and revolutionary modifications are made in the device dimension, structural changes, and dimensions. The effect of MOSFET scaling on electrostatic discharge (ESD) and electrical overstress (EOS) reliability and robustness have both positive and...

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Bibliographic Details
Main Author: Steven H. Voldman
Format: Article
Language:English
Published: Frontiers Media S.A. 2018-07-01
Series:Frontiers in Materials
Subjects:
MOSFET scaling
electrostatic discharge
electrical overstress
latchup
scaling theory
Online Access:https://www.frontiersin.org/article/10.3389/fmats.2018.00033/full
id doaj-8c43552d6cf246859497aa398c357724
record_format Article
spelling doaj-8c43552d6cf246859497aa398c3577242020-11-24T22:16:36ZengFrontiers Media S.A.Frontiers in Materials2296-80162018-07-01510.3389/fmats.2018.00033343802Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS ReliabilitySteven H. VoldmanIn the scaling of semiconductor devices, evolutionary and revolutionary modifications are made in the device dimension, structural changes, and dimensions. The effect of MOSFET scaling on electrostatic discharge (ESD) and electrical overstress (EOS) reliability and robustness have both positive and negative implications. In this publication, the evolutionary and revolutionary technology changes on how they influence the ESD and EOS results will be discussed in full detail. The paper will discuss changes in the substrate, wells, isolation, source/drain regions, gate dielectrics, inter-level dielectrics, and interconnects.https://www.frontiersin.org/article/10.3389/fmats.2018.00033/fullMOSFET scalingelectrostatic dischargeelectrical overstresslatchupscaling theory
collection DOAJ
language English
format Article
sources DOAJ
author Steven H. Voldman
spellingShingle Steven H. Voldman
Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability
Frontiers in Materials
MOSFET scaling
electrostatic discharge
electrical overstress
latchup
scaling theory
author_facet Steven H. Voldman
author_sort Steven H. Voldman
title Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability
title_short Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability
title_full Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability
title_fullStr Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability
title_full_unstemmed Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability
title_sort evolution, revolution, and technology scaling—the impact on esd and eos reliability
publisher Frontiers Media S.A.
series Frontiers in Materials
issn 2296-8016
publishDate 2018-07-01
description In the scaling of semiconductor devices, evolutionary and revolutionary modifications are made in the device dimension, structural changes, and dimensions. The effect of MOSFET scaling on electrostatic discharge (ESD) and electrical overstress (EOS) reliability and robustness have both positive and negative implications. In this publication, the evolutionary and revolutionary technology changes on how they influence the ESD and EOS results will be discussed in full detail. The paper will discuss changes in the substrate, wells, isolation, source/drain regions, gate dielectrics, inter-level dielectrics, and interconnects.
topic MOSFET scaling
electrostatic discharge
electrical overstress
latchup
scaling theory
url https://www.frontiersin.org/article/10.3389/fmats.2018.00033/full
work_keys_str_mv AT stevenhvoldman evolutionrevolutionandtechnologyscalingtheimpactonesdandeosreliability
_version_ 1725788883808944128

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