Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)

A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region. The mechanism of the EI-IGBT is that electrons are injected in both OFF- and ON-state, thus accelerated electron-hole recombination is achiev...

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Main Authors:	Wanjun Chen, Hong Tao, Lunfei Lou, Chao Liu, Wu Cheng, Xuefeng Tang, Hongquan Liu, Qi Zhou, Xiaochuan Deng, Zhaoji Li, Bo Zhang
Format:	Article
Language:	English
Published:	IEEE 2017-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	Insulated gate bipolar transistor (IGBT) turn-off electron injection forward voltage drop
Online Access:	https://ieeexplore.ieee.org/document/7924324/

id	doaj-8c3897be28d0471abab89b3a181febf3
record_format	Article
spelling	doaj-8c3897be28d0471abab89b3a181febf32021-03-29T18:45:05ZengIEEEIEEE Journal of the Electron Devices Society2168-67342017-01-015427528210.1109/JEDS.2017.27017917924324Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)Wanjun Chen0https://orcid.org/0000-0002-8398-4548Hong Tao1Lunfei Lou2Chao Liu3Wu Cheng4Xuefeng Tang5Hongquan Liu6Qi Zhou7https://orcid.org/0000-0002-9265-126XXiaochuan Deng8https://orcid.org/0000-0003-3816-4724Zhaoji Li9Bo Zhang10State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, ChinaA new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region. The mechanism of the EI-IGBT is that electrons are injected in both OFF- and ON-state, thus accelerated electron-hole recombination is achieved, resulting in a fast turn-off process. Meanwhile, a low forward voltage drop is obtained due to an enhanced conductivity modulation. The simulation results show that, compared with the conventional IGBT, the proposed EI-IGBT delivers a comparable breakdown voltage while featuring an 80% shorter turn-off time (or a 72% lower turn-off loss) or a 23% lower forward voltage drop, resulting in a reduction of total energy loss.https://ieeexplore.ieee.org/document/7924324/Insulated gate bipolar transistor (IGBT)turn-offelectron injectionforward voltage drop
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Wanjun Chen Hong Tao Lunfei Lou Chao Liu Wu Cheng Xuefeng Tang Hongquan Liu Qi Zhou Xiaochuan Deng Zhaoji Li Bo Zhang
spellingShingle	Wanjun Chen Hong Tao Lunfei Lou Chao Liu Wu Cheng Xuefeng Tang Hongquan Liu Qi Zhou Xiaochuan Deng Zhaoji Li Bo Zhang Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT) IEEE Journal of the Electron Devices Society Insulated gate bipolar transistor (IGBT) turn-off electron injection forward voltage drop
author_facet	Wanjun Chen Hong Tao Lunfei Lou Chao Liu Wu Cheng Xuefeng Tang Hongquan Liu Qi Zhou Xiaochuan Deng Zhaoji Li Bo Zhang
author_sort	Wanjun Chen
title	Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
title_short	Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
title_full	Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
title_fullStr	Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
title_full_unstemmed	Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
title_sort	low loss insulated gate bipolar transistor with electron injection (ei-igbt)
publisher	IEEE
series	IEEE Journal of the Electron Devices Society
issn	2168-6734
publishDate	2017-01-01
description	A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region. The mechanism of the EI-IGBT is that electrons are injected in both OFF- and ON-state, thus accelerated electron-hole recombination is achieved, resulting in a fast turn-off process. Meanwhile, a low forward voltage drop is obtained due to an enhanced conductivity modulation. The simulation results show that, compared with the conventional IGBT, the proposed EI-IGBT delivers a comparable breakdown voltage while featuring an 80% shorter turn-off time (or a 72% lower turn-off loss) or a 23% lower forward voltage drop, resulting in a reduction of total energy loss.
topic	Insulated gate bipolar transistor (IGBT) turn-off electron injection forward voltage drop
url	https://ieeexplore.ieee.org/document/7924324/
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Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)

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