Determination of ultra-short laser induced damage threshold of KH2PO4 crystal: Numerical calculation and experimental verification

• Main Authors: Jian Cheng, Mingjun Chen, Kyle Kafka, Drake Austin, Jinghe Wang, Yong Xiao, Enam Chowdhury
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2016-03-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/1.4945415

Rapid growth and ultra-precision machining of large-size KDP (KH2PO4) crystals with high laser damage resistance are tough challenges in the development of large laser systems. It is of high interest and practical significance to have theoretical models for scientists and manufacturers to determine the laser-induced damage threshold (LIDT) of actually prepared KDP optics. Here, we numerically and experimentally investigate the laser-induced damage on KDP crystals in ultra-short pulse laser regime. On basis of the rate equation for free electron generation, a model dedicated to predicting the LIDT is developed by considering the synergistic effect of photoionization, impact ionization and decay of electrons. Laser damage tests are performed to measure the single-pulse LIDT with several testing protocols. The testing results combined with previously reported experimental data agree well with those calculated by the model. By taking the light intensification into consideration, the model is successfully applied to quantitatively evaluate the effect of surface flaws inevitably introduced in the preparation processes on the laser damage resistance of KDP crystals. This work can not only contribute to further understanding of the laser damage mechanisms of optical materials, but also provide available models for evaluating the laser damage resistance of exquisitely prepared optical components used in high power laser systems.