Multi-Variable Thermal Modeling of Power Devices Considering Mutual Coupling

In relation to power converter design, power density is increasing while the form factor is decreasing. This trend generally reduces the rate of the cooling process, which increases the mutual thermal coupling among the surrounding power components. Most of the traditional models usually ignore the...

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Main Authors: Kaixin Wei, Tian Cheng, Dylan Dah-Chuan Lu, Yam P. Siwakoti, Chengning Zhang
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/9/16/3240
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spelling doaj-8b5631850956413a98338514d3a7cab72020-11-25T02:30:14ZengMDPI AGApplied Sciences2076-34172019-08-01916324010.3390/app9163240app9163240Multi-Variable Thermal Modeling of Power Devices Considering Mutual CouplingKaixin Wei0Tian Cheng1Dylan Dah-Chuan Lu2Yam P. Siwakoti3Chengning Zhang4Collaborative Innovation Center of Electric Vehicles in Beijing, National Engineering Laboratory for Electric Vehicles, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaFaculty of Engineering and Information Technology, University of Technology Sydney, Sydney, NSW 2007, AustraliaFaculty of Engineering and Information Technology, University of Technology Sydney, Sydney, NSW 2007, AustraliaFaculty of Engineering and Information Technology, University of Technology Sydney, Sydney, NSW 2007, AustraliaCollaborative Innovation Center of Electric Vehicles in Beijing, National Engineering Laboratory for Electric Vehicles, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaIn relation to power converter design, power density is increasing while the form factor is decreasing. This trend generally reduces the rate of the cooling process, which increases the mutual thermal coupling among the surrounding power components. Most of the traditional models usually ignore the mutual effects or just focus on the conduction coupling. To deal with these factors, the thermal modeling for a boost converter system has been built to compare the junction temperatures (<i>T<sub>j</sub></i>) and the increments under different working conditions in order to consider the conduction coupling. A multi-variable thermal resistances model is proposed in this paper to incorporate the convection thermal coupling into the mutual thermal effects. The coupling resistances, MOSFET to the diode (<inline-formula> <math display="inline"> <semantics> <mrow> <msub> <mi>R</mi> <mrow> <mrow><mi mathvariant="italic">cp-</mi> </mrow> <mover accent="true"> <mrow> <mi mathvariant="italic">MD</mi> </mrow> <mo stretchy="true">⇀</mo> </mover> </mrow> </msub> </mrow> </semantics> </math> </inline-formula>), and the diode to MOSFET (<inline-formula> <math display="inline"> <semantics> <mrow> <msub> <mi>R</mi> <mrow> <mrow> <mi mathvariant="italic">cp-</mi> </mrow> <mover accent="true"> <mrow> <mi mathvariant="italic">DM</mi> </mrow> <mo stretchy="true">⇀</mo> </mover> </mrow> </msub> </mrow> </semantics> </math> </inline-formula>) have been calculated and the relationships between coupling resistances and their impact factors (separation distances and working currents) have been discussed. New case temperatures (<i>T<sub>c</sub></i>) obtained by calculation and additional measurements at other separation distances serve to verify the efficacy of the proposed model. This model enhances the current thermal models and provides an effective method to calculate the thermal coupling resistances which can be used to estimate the <i>T<sub>j</sub></i>. As the coupling resistances are distance dependent, the model also helps to optimize and fine-tune the placements of components in high-power density converters.https://www.mdpi.com/2076-3417/9/16/3240thermal modelingmutual thermal couplingthermal resistancespower convertercase temperature
collection DOAJ
language English
format Article
sources DOAJ
author Kaixin Wei
Tian Cheng
Dylan Dah-Chuan Lu
Yam P. Siwakoti
Chengning Zhang
spellingShingle Kaixin Wei
Tian Cheng
Dylan Dah-Chuan Lu
Yam P. Siwakoti
Chengning Zhang
Multi-Variable Thermal Modeling of Power Devices Considering Mutual Coupling
Applied Sciences
thermal modeling
mutual thermal coupling
thermal resistances
power converter
case temperature
author_facet Kaixin Wei
Tian Cheng
Dylan Dah-Chuan Lu
Yam P. Siwakoti
Chengning Zhang
author_sort Kaixin Wei
title Multi-Variable Thermal Modeling of Power Devices Considering Mutual Coupling
title_short Multi-Variable Thermal Modeling of Power Devices Considering Mutual Coupling
title_full Multi-Variable Thermal Modeling of Power Devices Considering Mutual Coupling
title_fullStr Multi-Variable Thermal Modeling of Power Devices Considering Mutual Coupling
title_full_unstemmed Multi-Variable Thermal Modeling of Power Devices Considering Mutual Coupling
title_sort multi-variable thermal modeling of power devices considering mutual coupling
publisher MDPI AG
series Applied Sciences
issn 2076-3417
publishDate 2019-08-01
description In relation to power converter design, power density is increasing while the form factor is decreasing. This trend generally reduces the rate of the cooling process, which increases the mutual thermal coupling among the surrounding power components. Most of the traditional models usually ignore the mutual effects or just focus on the conduction coupling. To deal with these factors, the thermal modeling for a boost converter system has been built to compare the junction temperatures (<i>T<sub>j</sub></i>) and the increments under different working conditions in order to consider the conduction coupling. A multi-variable thermal resistances model is proposed in this paper to incorporate the convection thermal coupling into the mutual thermal effects. The coupling resistances, MOSFET to the diode (<inline-formula> <math display="inline"> <semantics> <mrow> <msub> <mi>R</mi> <mrow> <mrow><mi mathvariant="italic">cp-</mi> </mrow> <mover accent="true"> <mrow> <mi mathvariant="italic">MD</mi> </mrow> <mo stretchy="true">⇀</mo> </mover> </mrow> </msub> </mrow> </semantics> </math> </inline-formula>), and the diode to MOSFET (<inline-formula> <math display="inline"> <semantics> <mrow> <msub> <mi>R</mi> <mrow> <mrow> <mi mathvariant="italic">cp-</mi> </mrow> <mover accent="true"> <mrow> <mi mathvariant="italic">DM</mi> </mrow> <mo stretchy="true">⇀</mo> </mover> </mrow> </msub> </mrow> </semantics> </math> </inline-formula>) have been calculated and the relationships between coupling resistances and their impact factors (separation distances and working currents) have been discussed. New case temperatures (<i>T<sub>c</sub></i>) obtained by calculation and additional measurements at other separation distances serve to verify the efficacy of the proposed model. This model enhances the current thermal models and provides an effective method to calculate the thermal coupling resistances which can be used to estimate the <i>T<sub>j</sub></i>. As the coupling resistances are distance dependent, the model also helps to optimize and fine-tune the placements of components in high-power density converters.
topic thermal modeling
mutual thermal coupling
thermal resistances
power converter
case temperature
url https://www.mdpi.com/2076-3417/9/16/3240
work_keys_str_mv AT kaixinwei multivariablethermalmodelingofpowerdevicesconsideringmutualcoupling
AT tiancheng multivariablethermalmodelingofpowerdevicesconsideringmutualcoupling
AT dylandahchuanlu multivariablethermalmodelingofpowerdevicesconsideringmutualcoupling
AT yampsiwakoti multivariablethermalmodelingofpowerdevicesconsideringmutualcoupling
AT chengningzhang multivariablethermalmodelingofpowerdevicesconsideringmutualcoupling
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