Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA) based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. Th...

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Bibliographic Details
Main Authors: J. Sturm, M. Groinig, X. Xiang
Format: Article
Language:English
Published: Spolecnost pro radioelektronicke inzenyrstvi 2014-04-01
Series:Radioengineering
Subjects:
Low-noise amplifier
LNA
variable gain
tunable band
multi-standard receiver
Online Access:http://www.radioeng.cz/fulltexts/2014/14_01_0319_0327.pdf

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