| Summary: | The chemical oxidation method can be used to mass-produce graphene oxides (GOs) from highly oriented pyrolytic graphite. However, numerous oxygen-containing functional groups (hydroxyl, epoxy, carbonyl, etc.) exist in typical GO surfaces, resulting in serious electrical losses. Hence, GO must be processed into reduced graphene oxide (rGO) by the removal of most of the oxygen-containing functional groups. This research concentrates on the reduction efficiency of GO films that are manufactured using atmospheric-pressure and continuous plasma irradiation. Before and after sessions of plasma irradiation with various irradiation times, shelters, and working distances, the surface, physical, and electrical characteristics of homemade GO and rGO films are measured and analyzed. Experimental results showed that the sheet resistance values of rGO films with silicon or quartz shelters were markedly lower than those of GO films because the rGO films were mostly deprived of oxygen-containing functional groups. The lowest sheet resistance value and the largest carbon-to-oxygen ratio of typical rGO films were approximately 90 Ω/sq and 1.522, respectively. The intensity of the C–O bond peak in typical rGO films was significantly lower than that in GO films. Moreover, the intensity of the C–C bond peak in typical rGO films was considerably higher than that in GO films.
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