The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System

The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System

(Al + N)-codoped p-type zinc oxide (ZnO)/undoped n-type ZnO homojunction structure was deposited onto Si (100) substrate by using radio frequency (rf) magnetron cosputtering system. Transparent indium tin oxide (ITO)-ZnO cosputtered film was employed as the ohmic contact electrode to the n-type ZnO...

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Bibliographic Details
Main Authors:	Hung-Jen Chiu, Tai-Hong Chen, Li-Wen Lai, Ching-Ting Lee, Jhen-Dong Hong, Day-Shan Liu
Format:	Article
Language:	English
Published:	Hindawi Limited 2015-01-01
Series:	Journal of Nanomaterials
Online Access:	http://dx.doi.org/10.1155/2015/284835

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