Foreword Special Issue on Transistors With Steep Subthreshold Swing for Low-Power Electronics
The increasing power consumption of integrated circuits is today the main impediment to the density scaling of integrated circuit technology. The reduction of supply voltage is the most effective way to reduce power; however, using modern transistors voltage reduction is traded against reduced speed...
Main Authors: | David Esseni, Adrian M. Ionescu, Alan Seabaugh, Yee-Chia Yeo |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2015-01-01
|
Series: | IEEE Journal of the Electron Devices Society |
Online Access: | https://ieeexplore.ieee.org/document/7091988/ |
Similar Items
-
Ferroelectricity-Based Transistors for Steep Subthreshold Swing Application
by: Pin-Guang Chen, et al.
Published: (2017) -
Minimum-Energy Digital Computing With Steep Subthreshold Swing Tunnel FETs
by: Daniel S. Truesdell, et al.
Published: (2020-01-01) -
Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing
by: Chengji Jin, et al.
Published: (2020-01-01) -
Subthreshold-swing physics of tunnel field-effect transistors
by: Wei Cao, et al.
Published: (2014-06-01) -
Enhancement-mode polymer space-charge-limited transistor with low subthreshold swing
by: Tsai, Hung-Kuo, et al.
Published: (2011)