GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH4)2SX + UV Interface Treatment Technology

GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH4)2SX + UV Interface Treatment Technology

This study examines the praseodymium-oxide- (Pr2O3-) passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH4)2SX + ultraviolet (UV) illumination. An electron-beam ev...

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Bibliographic Details
Main Authors:	Chao-Wei Lin, Hsien-Chin Chiu
Format:	Article
Language:	English
Published:	Hindawi Limited 2012-01-01
Series:	Active and Passive Electronic Components
Online Access:	http://dx.doi.org/10.1155/2012/459043

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