A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials
Abstract A new method to produce a model system for the study of radiation damage in non-radioactive materials is presented. The method is based on homogenously dissolving minute amounts of 228Th ions in thin films in a controllable manner using a small volume chemical bath deposition technique. Thi...
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2017-06-01
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Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-017-03150-9 |
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doaj-89d90c1911694624b7b59c6880bdc72d2020-12-08T02:42:41ZengNature Publishing GroupScientific Reports2045-23222017-06-01711910.1038/s41598-017-03150-9A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive MaterialsTzvi Templeman0Michael Shandalov1Michael Schmidt2Amir Tal3Gabby Sarusi4Eyal Yahel5Itzhak Kelson6Yuval Golan7Department of Materials Engineering, Ben-Gurion University of the NegevDepartment of Physics, Nuclear Research Center NegevSchool of Physics and Astronomy, Tel-Aviv UniversityThe Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion UniversityThe Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion UniversityDepartment of Physics, Nuclear Research Center NegevSchool of Physics and Astronomy, Tel-Aviv UniversityDepartment of Materials Engineering, Ben-Gurion University of the NegevAbstract A new method to produce a model system for the study of radiation damage in non-radioactive materials is presented. The method is based on homogenously dissolving minute amounts of 228Th ions in thin films in a controllable manner using a small volume chemical bath deposition technique. This approach is demonstrated for PbS films. The properties of the PbS (228Th) solid solution film activity were investigated by monitoring the accompanying radioactive processes. Electrical resistivity studies were performed and decay-event damage accumulation was measured, followed by isochronal annealing which presented two annealing stages and another two sub-stages. This is the first report on self-irradiating damage studies in IV-VI semiconductors and the resulting films present a novel method for the analysis of dilute defect systems in semiconductor thin films.https://doi.org/10.1038/s41598-017-03150-9 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Tzvi Templeman Michael Shandalov Michael Schmidt Amir Tal Gabby Sarusi Eyal Yahel Itzhak Kelson Yuval Golan |
spellingShingle |
Tzvi Templeman Michael Shandalov Michael Schmidt Amir Tal Gabby Sarusi Eyal Yahel Itzhak Kelson Yuval Golan A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials Scientific Reports |
author_facet |
Tzvi Templeman Michael Shandalov Michael Schmidt Amir Tal Gabby Sarusi Eyal Yahel Itzhak Kelson Yuval Golan |
author_sort |
Tzvi Templeman |
title |
A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials |
title_short |
A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials |
title_full |
A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials |
title_fullStr |
A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials |
title_full_unstemmed |
A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials |
title_sort |
new solid solution approach for the study of self-irradiating damage in non-radioactive materials |
publisher |
Nature Publishing Group |
series |
Scientific Reports |
issn |
2045-2322 |
publishDate |
2017-06-01 |
description |
Abstract A new method to produce a model system for the study of radiation damage in non-radioactive materials is presented. The method is based on homogenously dissolving minute amounts of 228Th ions in thin films in a controllable manner using a small volume chemical bath deposition technique. This approach is demonstrated for PbS films. The properties of the PbS (228Th) solid solution film activity were investigated by monitoring the accompanying radioactive processes. Electrical resistivity studies were performed and decay-event damage accumulation was measured, followed by isochronal annealing which presented two annealing stages and another two sub-stages. This is the first report on self-irradiating damage studies in IV-VI semiconductors and the resulting films present a novel method for the analysis of dilute defect systems in semiconductor thin films. |
url |
https://doi.org/10.1038/s41598-017-03150-9 |
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