A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials

Abstract A new method to produce a model system for the study of radiation damage in non-radioactive materials is presented. The method is based on homogenously dissolving minute amounts of 228Th ions in thin films in a controllable manner using a small volume chemical bath deposition technique. Thi...

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Main Authors: Tzvi Templeman, Michael Shandalov, Michael Schmidt, Amir Tal, Gabby Sarusi, Eyal Yahel, Itzhak Kelson, Yuval Golan
Format: Article
Language:English
Published: Nature Publishing Group 2017-06-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-017-03150-9
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spelling doaj-89d90c1911694624b7b59c6880bdc72d2020-12-08T02:42:41ZengNature Publishing GroupScientific Reports2045-23222017-06-01711910.1038/s41598-017-03150-9A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive MaterialsTzvi Templeman0Michael Shandalov1Michael Schmidt2Amir Tal3Gabby Sarusi4Eyal Yahel5Itzhak Kelson6Yuval Golan7Department of Materials Engineering, Ben-Gurion University of the NegevDepartment of Physics, Nuclear Research Center NegevSchool of Physics and Astronomy, Tel-Aviv UniversityThe Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion UniversityThe Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion UniversityDepartment of Physics, Nuclear Research Center NegevSchool of Physics and Astronomy, Tel-Aviv UniversityDepartment of Materials Engineering, Ben-Gurion University of the NegevAbstract A new method to produce a model system for the study of radiation damage in non-radioactive materials is presented. The method is based on homogenously dissolving minute amounts of 228Th ions in thin films in a controllable manner using a small volume chemical bath deposition technique. This approach is demonstrated for PbS films. The properties of the PbS (228Th) solid solution film activity were investigated by monitoring the accompanying radioactive processes. Electrical resistivity studies were performed and decay-event damage accumulation was measured, followed by isochronal annealing which presented two annealing stages and another two sub-stages. This is the first report on self-irradiating damage studies in IV-VI semiconductors and the resulting films present a novel method for the analysis of dilute defect systems in semiconductor thin films.https://doi.org/10.1038/s41598-017-03150-9
collection DOAJ
language English
format Article
sources DOAJ
author Tzvi Templeman
Michael Shandalov
Michael Schmidt
Amir Tal
Gabby Sarusi
Eyal Yahel
Itzhak Kelson
Yuval Golan
spellingShingle Tzvi Templeman
Michael Shandalov
Michael Schmidt
Amir Tal
Gabby Sarusi
Eyal Yahel
Itzhak Kelson
Yuval Golan
A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials
Scientific Reports
author_facet Tzvi Templeman
Michael Shandalov
Michael Schmidt
Amir Tal
Gabby Sarusi
Eyal Yahel
Itzhak Kelson
Yuval Golan
author_sort Tzvi Templeman
title A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials
title_short A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials
title_full A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials
title_fullStr A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials
title_full_unstemmed A New Solid Solution Approach for the Study of Self-Irradiating Damage in non-Radioactive Materials
title_sort new solid solution approach for the study of self-irradiating damage in non-radioactive materials
publisher Nature Publishing Group
series Scientific Reports
issn 2045-2322
publishDate 2017-06-01
description Abstract A new method to produce a model system for the study of radiation damage in non-radioactive materials is presented. The method is based on homogenously dissolving minute amounts of 228Th ions in thin films in a controllable manner using a small volume chemical bath deposition technique. This approach is demonstrated for PbS films. The properties of the PbS (228Th) solid solution film activity were investigated by monitoring the accompanying radioactive processes. Electrical resistivity studies were performed and decay-event damage accumulation was measured, followed by isochronal annealing which presented two annealing stages and another two sub-stages. This is the first report on self-irradiating damage studies in IV-VI semiconductors and the resulting films present a novel method for the analysis of dilute defect systems in semiconductor thin films.
url https://doi.org/10.1038/s41598-017-03150-9
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