Effect of indium low doping in ZnO based TFTs on electrical parameters and bias stress stability
Some applications of thin film transistors (TFTs) need the bottom-gate architecture and unpassivated channel backside. We propose a simple routine to fabricate indium doped ZnO-based TFT with satisfactory characteristics and acceptable stability against a bias stress in ambient room air. To this end...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4935789 |