Publisher’s Note: “Tunable band gap of MoS2-SiC van der Waals heterostructures under normal strain and an external electric field” [AIP Advances 7, 015116 (2017)]

Bibliographic Details
Main Authors:	Luo Min, Xu Yu E, Song Yu Xi
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2017-11-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5008896

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record_format	Article
spelling	doaj-8976ebcfb3194129917e978cced7d7902020-11-24T23:18:44ZengAIP Publishing LLCAIP Advances2158-32262017-11-01711119902119902-110.1063/1.5008896055710ADVPublisher’s Note: “Tunable band gap of MoS2-SiC van der Waals heterostructures under normal strain and an external electric field” [AIP Advances 7, 015116 (2017)]Luo Min0Xu Yu E1Song Yu Xi2Department of Physics, Shanghai Polytechnic University, Shanghai 201209, ChinaDepartment of Physics, Shanghai Polytechnic University, Shanghai 201209, ChinaKey Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241, Chinahttp://dx.doi.org/10.1063/1.5008896
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Luo Min Xu Yu E Song Yu Xi
spellingShingle	Luo Min Xu Yu E Song Yu Xi Publisher’s Note: “Tunable band gap of MoS2-SiC van der Waals heterostructures under normal strain and an external electric field” [AIP Advances 7, 015116 (2017)] AIP Advances
author_facet	Luo Min Xu Yu E Song Yu Xi
author_sort	Luo Min
title	Publisher’s Note: “Tunable band gap of MoS2-SiC van der Waals heterostructures under normal strain and an external electric field” [AIP Advances 7, 015116 (2017)]
title_short	Publisher’s Note: “Tunable band gap of MoS2-SiC van der Waals heterostructures under normal strain and an external electric field” [AIP Advances 7, 015116 (2017)]
title_full	Publisher’s Note: “Tunable band gap of MoS2-SiC van der Waals heterostructures under normal strain and an external electric field” [AIP Advances 7, 015116 (2017)]
title_fullStr	Publisher’s Note: “Tunable band gap of MoS2-SiC van der Waals heterostructures under normal strain and an external electric field” [AIP Advances 7, 015116 (2017)]
title_full_unstemmed	Publisher’s Note: “Tunable band gap of MoS2-SiC van der Waals heterostructures under normal strain and an external electric field” [AIP Advances 7, 015116 (2017)]
title_sort	publisher’s note: “tunable band gap of mos2-sic van der waals heterostructures under normal strain and an external electric field” [aip advances 7, 015116 (2017)]
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2017-11-01
url	http://dx.doi.org/10.1063/1.5008896
work_keys_str_mv	AT luomin publishersnotetunablebandgapofmos2sicvanderwaalsheterostructuresundernormalstrainandanexternalelectricfieldaipadvances70151162017 AT xuyue publishersnotetunablebandgapofmos2sicvanderwaalsheterostructuresundernormalstrainandanexternalelectricfieldaipadvances70151162017 AT songyuxi publishersnotetunablebandgapofmos2sicvanderwaalsheterostructuresundernormalstrainandanexternalelectricfieldaipadvances70151162017
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Publisher’s Note: “Tunable band gap of MoS2-SiC van der Waals heterostructures under normal strain and an external electric field” [AIP Advances 7, 015116 (2017)]

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