Suppressing bias stress degradation in high performance solution processed organic transistors operating in air

Suppressing bias stress degradation in high performance solution processed organic transistors operating in air

Electrical instability of organic field-effect transistors (OFETs) during operation remains a challenge that limits the device’s real-world technological viability. Here, the authors report a method for diagnosing and suppressing bias stress in solution-processed OFETs operated in air.

Bibliographic Details
Main Authors: Hamna F. Iqbal, Qianxiang Ai, Karl J. Thorley, Hu Chen, Iain McCulloch, Chad Risko, John E. Anthony, Oana D. Jurchescu
Format: Article
Language:English
Published: Nature Publishing Group 2021-04-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-021-22683-2

Internet

https://doi.org/10.1038/s41467-021-22683-2

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