A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation
The features of spectrum formation in CdTe (CdZnTe) detectors under gamma quanta radiation are presented. The main characteristics of a semiconductor detector, i.e. the energy resolution and the registration efficiency, are determined. The results can be used as a basis for physical and mathematical...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Tver State University
2017-12-01
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| Series: | Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов |
| Subjects: | |
| Online Access: | http://physchemaspects.ru/archives/2017/fh2017-doi-10-26456-pcascnn-2017-9-465.pdf |