A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation

A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation

The features of spectrum formation in CdTe (CdZnTe) detectors under gamma quanta radiation are presented. The main characteristics of a semiconductor detector, i.e. the energy resolution and the registration efficiency, are determined. The results can be used as a basis for physical and mathematical...

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Bibliographic Details
Main Authors: A.A. Smirnov, I.A. Kaplunov, A.A. Ol’nev, A.N. Nikiforova
Format: Article
Language:Russian
Published: Tver State University 2017-12-01
Series:Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
Subjects:
semiconductor detectors
cadmium telluride
Online Access:http://physchemaspects.ru/archives/2017/fh2017-doi-10-26456-pcascnn-2017-9-465.pdf
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spelling doaj-88633ea7879b4807af0fee591ffab9d92020-11-25T00:16:04ZrusTver State UniversityФизико-химические аспекты изучения кластеров, наноструктур и наноматериалов2226-44422658-43602017-12-01946547410.26456/pcascnn/2017.9.465A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiationA.A. Smirnov0I.A. Kaplunov1A.A. Ol’nev2A.N. Nikiforova3Institute of Physical and Technical ProblemsTver State UniversityInstitute of Physical and Technical ProblemsInstitute of Physical and Technical ProblemsThe features of spectrum formation in CdTe (CdZnTe) detectors under gamma quanta radiation are presented. The main characteristics of a semiconductor detector, i.e. the energy resolution and the registration efficiency, are determined. The results can be used as a basis for physical and mathematical models of operation of CdTe (CdZnTe) semiconductor detectors for registration of gamma- and x-ray radiation over a wide energy range.http://physchemaspects.ru/archives/2017/fh2017-doi-10-26456-pcascnn-2017-9-465.pdfsemiconductor detectorscadmium telluride
collection DOAJ
language Russian
format Article
sources DOAJ
author A.A. Smirnov
I.A. Kaplunov
A.A. Ol’nev
A.N. Nikiforova
spellingShingle A.A. Smirnov
I.A. Kaplunov
A.A. Ol’nev
A.N. Nikiforova
A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation
Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
semiconductor detectors
cadmium telluride
author_facet A.A. Smirnov
I.A. Kaplunov
A.A. Ol’nev
A.N. Nikiforova
author_sort A.A. Smirnov
title A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation
title_short A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation
title_full A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation
title_fullStr A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation
title_full_unstemmed A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation
title_sort mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of cdte (cdznte) at the gamma-quanta irradiation
publisher Tver State University
series Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
issn 2226-4442
2658-4360
publishDate 2017-12-01
description The features of spectrum formation in CdTe (CdZnTe) detectors under gamma quanta radiation are presented. The main characteristics of a semiconductor detector, i.e. the energy resolution and the registration efficiency, are determined. The results can be used as a basis for physical and mathematical models of operation of CdTe (CdZnTe) semiconductor detectors for registration of gamma- and x-ray radiation over a wide energy range.
topic semiconductor detectors
cadmium telluride
url http://physchemaspects.ru/archives/2017/fh2017-doi-10-26456-pcascnn-2017-9-465.pdf
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