2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical...

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Bibliographic Details
Main Authors:	Xinke Liu, Hsien-Chin Chiu, Hou-Yu Wang, Cong Hu, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien
Format:	Article
Language:	English
Published:	IEEE 2018-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	Free standing gallium nitride (GaN) power p-n diode high breakdown voltage
Online Access:	https://ieeexplore.ieee.org/document/8417418/

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