2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical...

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Main Authors: Xinke Liu, Hsien-Chin Chiu, Hou-Yu Wang, Cong Hu, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Free standing gallium nitride (GaN)
power p-n diode
high breakdown voltage
Online Access:https://ieeexplore.ieee.org/document/8417418/
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spelling doaj-885228ade1b04a168d4c5b585890d0a22021-03-29T18:46:28ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-01682582910.1109/JEDS.2018.285829484174182.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact MaterialsXinke Liu0Hsien-Chin Chiu1https://orcid.org/0000-0003-1068-5798Hou-Yu Wang2Cong Hu3Hsiang-Chun Wang4Hsuan-Ling Kao5https://orcid.org/0000-0001-9448-9908Feng-Tso Chien6https://orcid.org/0000-0002-4097-6046College of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaDepartment of Electronic Engineering, Chang Gung University, Taoyuan, TaiwanDept. of Electron. Eng., Chang Gung Univ., Taoyuan, TaiwanCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaDepartment of Electronic Engineering, Chang Gung University, Taoyuan, TaiwanDepartment of Electronic Engineering, Chang Gung University, Taoyuan, TaiwanDepartment of Electronic Engineering, Feng-Chia University, Taichung, TaiwanThis paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical GaN PN diode in this paper shows turn-on voltage Von of ~3.3-3.4 V, on/off current ratio of ~2.7 &#x00D7; 10<sup>7</sup>, and ideal factor n of ~2.1. The reverse recovery time Trr is 21.2 ns and 23.2 ns, respectively, under a testing temperature of 300 K and 500 K. With an on-state resistance Ron of 3.9 m&#x03A9;&#x00B7;cm<sup>2</sup> and a breakdown voltage V<sub>BR</sub> of 2.4 kV, this device achieves a power device figure-of-merit V<sub>BR</sub><sup>2</sup>/R<sub>on</sub> of 1.5&#x00D7;10<sup>9</sup> V<sup>2</sup>&#x03A9;<sup>-1</sup>cm<sup>-2</sup>.https://ieeexplore.ieee.org/document/8417418/Free standing gallium nitride (GaN)power p-n diodehigh breakdown voltage
collection DOAJ
language English
format Article
sources DOAJ
author Xinke Liu
Hsien-Chin Chiu
Hou-Yu Wang
Cong Hu
Hsiang-Chun Wang
Hsuan-Ling Kao
Feng-Tso Chien
spellingShingle Xinke Liu
Hsien-Chin Chiu
Hou-Yu Wang
Cong Hu
Hsiang-Chun Wang
Hsuan-Ling Kao
Feng-Tso Chien
2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials
IEEE Journal of the Electron Devices Society
Free standing gallium nitride (GaN)
power p-n diode
high breakdown voltage
author_facet Xinke Liu
Hsien-Chin Chiu
Hou-Yu Wang
Cong Hu
Hsiang-Chun Wang
Hsuan-Ling Kao
Feng-Tso Chien
author_sort Xinke Liu
title 2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials
title_short 2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials
title_full 2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials
title_fullStr 2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials
title_full_unstemmed 2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials
title_sort 2.4 kv vertical gan pn diodes on free standing gan wafer using cmos-compatible contact materials
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2018-01-01
description This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical GaN PN diode in this paper shows turn-on voltage Von of ~3.3-3.4 V, on/off current ratio of ~2.7 &#x00D7; 10<sup>7</sup>, and ideal factor n of ~2.1. The reverse recovery time Trr is 21.2 ns and 23.2 ns, respectively, under a testing temperature of 300 K and 500 K. With an on-state resistance Ron of 3.9 m&#x03A9;&#x00B7;cm<sup>2</sup> and a breakdown voltage V<sub>BR</sub> of 2.4 kV, this device achieves a power device figure-of-merit V<sub>BR</sub><sup>2</sup>/R<sub>on</sub> of 1.5&#x00D7;10<sup>9</sup> V<sup>2</sup>&#x03A9;<sup>-1</sup>cm<sup>-2</sup>.
topic Free standing gallium nitride (GaN)
power p-n diode
high breakdown voltage
url https://ieeexplore.ieee.org/document/8417418/
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AT hsienchinchiu 24kvverticalganpndiodesonfreestandingganwaferusingcmoscompatiblecontactmaterials
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AT conghu 24kvverticalganpndiodesonfreestandingganwaferusingcmoscompatiblecontactmaterials
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