Summary: | This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical GaN PN diode in this paper shows turn-on voltage Von of ~3.3-3.4 V, on/off current ratio of ~2.7 × 10<sup>7</sup>, and ideal factor n of ~2.1. The reverse recovery time Trr is 21.2 ns and 23.2 ns, respectively, under a testing temperature of 300 K and 500 K. With an on-state resistance Ron of 3.9 mΩ·cm<sup>2</sup> and a breakdown voltage V<sub>BR</sub> of 2.4 kV, this device achieves a power device figure-of-merit V<sub>BR</sub><sup>2</sup>/R<sub>on</sub> of 1.5×10<sup>9</sup> V<sup>2</sup>Ω<sup>-1</sup>cm<sup>-2</sup>.
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