2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical...

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Bibliographic Details
Main Authors: Xinke Liu, Hsien-Chin Chiu, Hou-Yu Wang, Cong Hu, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8417418/
Description
Summary:This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated vertical GaN PN diodes. The vertical GaN PN diode in this paper shows turn-on voltage Von of ~3.3-3.4 V, on/off current ratio of ~2.7 &#x00D7; 10<sup>7</sup>, and ideal factor n of ~2.1. The reverse recovery time Trr is 21.2 ns and 23.2 ns, respectively, under a testing temperature of 300 K and 500 K. With an on-state resistance Ron of 3.9 m&#x03A9;&#x00B7;cm<sup>2</sup> and a breakdown voltage V<sub>BR</sub> of 2.4 kV, this device achieves a power device figure-of-merit V<sub>BR</sub><sup>2</sup>/R<sub>on</sub> of 1.5&#x00D7;10<sup>9</sup> V<sup>2</sup>&#x03A9;<sup>-1</sup>cm<sup>-2</sup>.
ISSN:2168-6734