High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage applications. To this aim, we compared two structures, one based on a step-graded (SG) buffer (reference structure), and another based on a superlatt...

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Bibliographic Details
Main Authors: Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Materials
Subjects:
GaN
high-electron-mobility transistor (HEMT)
trapping effect back-gating analysis
Online Access:https://www.mdpi.com/1996-1944/13/19/4271

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https://www.mdpi.com/1996-1944/13/19/4271

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