Structural Characteristics of the Si Whiskers Grown by Ni-Metal-Induced-Lateral-Crystallization

Structural Characteristics of the Si Whiskers Grown by Ni-Metal-Induced-Lateral-Crystallization

Si whiskers grown by Ni-Metal-Induced-Lateral-Crystallization (Ni-MILC) were grown at 413 °C, intentionally below the threshold for Solid State Crystallization, which is 420 °C. These whiskers have significant common characteristics with whiskers grown by the Vapor Liquid Solid (VLS) method. The cry...

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Bibliographic Details
Main Authors: Béla Pécz, Nikolaos Vouroutzis, György Zoltán Radnóczi, Nikolaos Frangis, John Stoemenos
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Nanomaterials
Subjects:
crystallization of silicon
transmission electron microscopy
Moiré fringes
Online Access:https://www.mdpi.com/2079-4991/11/8/1878

Internet

https://www.mdpi.com/2079-4991/11/8/1878

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