Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance

Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance

In semiconductor spintronic devices, Hanle precession allows for electrical detection of spin accumulation however it is inhibited at room temperature in GaAs by magnetic-field effects. Here, the authors present an alternative method for detecting spin accumulation based on ferromagnetic resonance.

Bibliographic Details
Main Authors: Changjiang Liu, Sahil J. Patel, Timothy A. Peterson, Chad C. Geppert, Kevin D. Christie, Gordon Stecklein, Chris J. Palmstrøm, Paul A. Crowell
Format: Article
Language:English
Published: Nature Publishing Group 2016-01-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms10296
Description
Summary:In semiconductor spintronic devices, Hanle precession allows for electrical detection of spin accumulation however it is inhibited at room temperature in GaAs by magnetic-field effects. Here, the authors present an alternative method for detecting spin accumulation based on ferromagnetic resonance.
ISSN:2041-1723

Similar Items