On the ionization loss spectra of high-energy channeled negatively charged particles

Abstract The ionization loss spectra of high-energy negatively charged particles which move in the planar channeling mode in a silicon crystal are studied with the use of numerical simulation. The case when the crystal thickness is on the order of the dechanneling length $$l_d$$ ld is considered. It...

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Bibliographic Details
Main Authors: S. V. Trofymenko, I. V. Kyryllin
Format: Article
Language:English
Published: SpringerOpen 2020-07-01
Series:European Physical Journal C: Particles and Fields
Online Access:http://link.springer.com/article/10.1140/epjc/s10052-020-8127-z
Description
Summary:Abstract The ionization loss spectra of high-energy negatively charged particles which move in the planar channeling mode in a silicon crystal are studied with the use of numerical simulation. The case when the crystal thickness is on the order of the dechanneling length $$l_d$$ ld is considered. It is shown that in this case the shape of the spectrum noticeably depends on $$l_d$$ ld . The evolution of various characteristic parameters of the spectrum with the change of $$l_d$$ ld is investigated. A method of the experimental determination of $$l_d$$ ld on the basis of the measurement of the ionization loss spectrum is proposed.
ISSN:1434-6044
1434-6052