Overview of Phase-Change Electrical Probe Memory
Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approac...
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doaj-86f3b382f1374878a4f0349835b19df82020-11-25T00:57:53ZengMDPI AGNanomaterials2079-49912018-09-0181077210.3390/nano8100772nano8100772Overview of Phase-Change Electrical Probe MemoryLei Wang0Wang Ren1Jing Wen2Bangshu Xiong3School of Information Engineering, Nanchang Hang Kong University, Nanchang 330069, ChinaShanghai Aerospace Electronic Technology Institute, Minxing district, Shanghai 201108, ChinaSchool of Information Engineering, Nanchang Hang Kong University, Nanchang 330069, ChinaSchool of Information Engineering, Nanchang Hang Kong University, Nanchang 330069, ChinaPhase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects.http://www.mdpi.com/2079-4991/8/10/772probephase-changecappingbottomoptimization |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Lei Wang Wang Ren Jing Wen Bangshu Xiong |
spellingShingle |
Lei Wang Wang Ren Jing Wen Bangshu Xiong Overview of Phase-Change Electrical Probe Memory Nanomaterials probe phase-change capping bottom optimization |
author_facet |
Lei Wang Wang Ren Jing Wen Bangshu Xiong |
author_sort |
Lei Wang |
title |
Overview of Phase-Change Electrical Probe Memory |
title_short |
Overview of Phase-Change Electrical Probe Memory |
title_full |
Overview of Phase-Change Electrical Probe Memory |
title_fullStr |
Overview of Phase-Change Electrical Probe Memory |
title_full_unstemmed |
Overview of Phase-Change Electrical Probe Memory |
title_sort |
overview of phase-change electrical probe memory |
publisher |
MDPI AG |
series |
Nanomaterials |
issn |
2079-4991 |
publishDate |
2018-09-01 |
description |
Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects. |
topic |
probe phase-change capping bottom optimization |
url |
http://www.mdpi.com/2079-4991/8/10/772 |
work_keys_str_mv |
AT leiwang overviewofphasechangeelectricalprobememory AT wangren overviewofphasechangeelectricalprobememory AT jingwen overviewofphasechangeelectricalprobememory AT bangshuxiong overviewofphasechangeelectricalprobememory |
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1725222380166447104 |