Overview of Phase-Change Electrical Probe Memory

Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approac...

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Main Authors: Lei Wang, Wang Ren, Jing Wen, Bangshu Xiong
Format: Article
Language:English
Published: MDPI AG 2018-09-01
Series:Nanomaterials
Subjects:
Online Access:http://www.mdpi.com/2079-4991/8/10/772
id doaj-86f3b382f1374878a4f0349835b19df8
record_format Article
spelling doaj-86f3b382f1374878a4f0349835b19df82020-11-25T00:57:53ZengMDPI AGNanomaterials2079-49912018-09-0181077210.3390/nano8100772nano8100772Overview of Phase-Change Electrical Probe MemoryLei Wang0Wang Ren1Jing Wen2Bangshu Xiong3School of Information Engineering, Nanchang Hang Kong University, Nanchang 330069, ChinaShanghai Aerospace Electronic Technology Institute, Minxing district, Shanghai 201108, ChinaSchool of Information Engineering, Nanchang Hang Kong University, Nanchang 330069, ChinaSchool of Information Engineering, Nanchang Hang Kong University, Nanchang 330069, ChinaPhase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects.http://www.mdpi.com/2079-4991/8/10/772probephase-changecappingbottomoptimization
collection DOAJ
language English
format Article
sources DOAJ
author Lei Wang
Wang Ren
Jing Wen
Bangshu Xiong
spellingShingle Lei Wang
Wang Ren
Jing Wen
Bangshu Xiong
Overview of Phase-Change Electrical Probe Memory
Nanomaterials
probe
phase-change
capping
bottom
optimization
author_facet Lei Wang
Wang Ren
Jing Wen
Bangshu Xiong
author_sort Lei Wang
title Overview of Phase-Change Electrical Probe Memory
title_short Overview of Phase-Change Electrical Probe Memory
title_full Overview of Phase-Change Electrical Probe Memory
title_fullStr Overview of Phase-Change Electrical Probe Memory
title_full_unstemmed Overview of Phase-Change Electrical Probe Memory
title_sort overview of phase-change electrical probe memory
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2018-09-01
description Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects.
topic probe
phase-change
capping
bottom
optimization
url http://www.mdpi.com/2079-4991/8/10/772
work_keys_str_mv AT leiwang overviewofphasechangeelectricalprobememory
AT wangren overviewofphasechangeelectricalprobememory
AT jingwen overviewofphasechangeelectricalprobememory
AT bangshuxiong overviewofphasechangeelectricalprobememory
_version_ 1725222380166447104