Remote growth of oxide heteroepitaxy through MoS2

• Main Authors: Chun-Hao Ma, Li-Syuan Lu, Haili Song, Jhih-Wei Chen, Ping-Chun Wu, Chung-Lin Wu, Rong Huang, Wen-Hao Chang, Ying-Hao Chu
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2021-05-01
• Series: APL Materials
• Online Access: http://dx.doi.org/10.1063/5.0045639

Advanced heterostructures composed of various materials can induce new physical properties and phenomena among existing materials, representing the essential foundation for modern electronics. Recently, many works have been carried out with novel heterostructures combining three-dimensional (3D) and two-dimensional (2D) materials; however, there is a lack of promising methods to fabricate 3D/2D heterostructures due to the poor interfacial quality and the incompatibility of fabrication processes. To further study the interaction between 3D and 2D materials, the fabrication of 3D/2D heterostructures with high-quality interfaces should be attempted. Here, we show the possibility of fabricating high-quality oxide remote epitaxies through layered materials for the exploration on new functionalities. Brand new heterostructures including numerous 3D oxides and MoS2 have been demonstrated and investigated. Our study clarifies a remarkable concept to realize precisely controllable 3D/2D/3D heteroepitaxies for the design and development of next-generation smart devices.