Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

We fabricated solution-processed indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing proc...

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Bibliographic Details
Main Authors: Heajeong Cheong, Shintaro Ogura, Hirobumi Ushijima, Manabu Yoshida, Nobuko Fukuda, Sei Uemura
Format: Article
Language:English
Published: AIP Publishing LLC 2015-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4922512

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