Method for forming a titanium-germanium contact layer for thermostabilization of transistors

Objective. The objective of the study is to obtain high-quality and reproducible electrophysical parameters of thin-film metal layers, the formation technology of which determines the reliability and quality of microelectronic products – silicon transistors.Methods. A method for forming a two-layer...

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Main Authors: T. A. Ismailov, A. R. Shakhmayeva, Sh. A. Yusufov, E. Kazalieva
Format: Article
Language:Russian
Published: Daghestan State Technical University 2021-01-01
Series:Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki
Subjects:
Online Access:https://vestnik.dgtu.ru/jour/article/view/876
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spelling doaj-864aabd8f3ef430b8844718ce22a52182021-07-28T20:54:38ZrusDaghestan State Technical UniversityVestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki 2073-61852542-095X2021-01-01474495610.21822/2073-6185-2020-47-4-49-56605Method for forming a titanium-germanium contact layer for thermostabilization of transistorsT. A. Ismailov0A. R. Shakhmayeva1Sh. A. Yusufov2E. Kazalieva3Daghestan State Technical UniversityDaghestan State Technical UniversityDaghestan State Technical UniversityDaghestan State Technical UniversityObjective. The objective of the study is to obtain high-quality and reproducible electrophysical parameters of thin-film metal layers, the formation technology of which determines the reliability and quality of microelectronic products – silicon transistors.Methods. A method for forming a two-layer titanium-germanium metallization to create a contact and remove heat from the collector junction of high-power semiconductor transistors on the reverse side of plates with formed structures is proposed. The proposed method ensures the quality of the soldered connection and thermal stabilization of semiconductor devices, increasing the reliability of the studied devices in radio electronic equipment systems.Results. This combination of sprayed metals provides a reliable contact to the collector area when the crystal is placed on the base of the case, which reduces the resistance of the ohmic transition and increases the output of suitable devices.Conclusion. Based on the results of experimental procedures, the optimal thicknesses of metal layers deposited on the reverse side of transistor crystals were obtained during the formation of metallization to fit crystals on the base of the case. The Ti-Ge system stability is studied. The technical result of the research is to improve the quality of planting by obtaining a uniform distribution of the Ti-Ge layer in a single technological cycle at a given temperature with a certain thickness for each metal separately.https://vestnik.dgtu.ru/jour/article/view/876titaniumgermaniumsolderhigh-capacity semiconductor transistorcrystalthermal stabilizationfusion pointsputteringcontact
collection DOAJ
language Russian
format Article
sources DOAJ
author T. A. Ismailov
A. R. Shakhmayeva
Sh. A. Yusufov
E. Kazalieva
spellingShingle T. A. Ismailov
A. R. Shakhmayeva
Sh. A. Yusufov
E. Kazalieva
Method for forming a titanium-germanium contact layer for thermostabilization of transistors
Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki
titanium
germanium
solder
high-capacity semiconductor transistor
crystal
thermal stabilization
fusion point
sputtering
contact
author_facet T. A. Ismailov
A. R. Shakhmayeva
Sh. A. Yusufov
E. Kazalieva
author_sort T. A. Ismailov
title Method for forming a titanium-germanium contact layer for thermostabilization of transistors
title_short Method for forming a titanium-germanium contact layer for thermostabilization of transistors
title_full Method for forming a titanium-germanium contact layer for thermostabilization of transistors
title_fullStr Method for forming a titanium-germanium contact layer for thermostabilization of transistors
title_full_unstemmed Method for forming a titanium-germanium contact layer for thermostabilization of transistors
title_sort method for forming a titanium-germanium contact layer for thermostabilization of transistors
publisher Daghestan State Technical University
series Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki
issn 2073-6185
2542-095X
publishDate 2021-01-01
description Objective. The objective of the study is to obtain high-quality and reproducible electrophysical parameters of thin-film metal layers, the formation technology of which determines the reliability and quality of microelectronic products – silicon transistors.Methods. A method for forming a two-layer titanium-germanium metallization to create a contact and remove heat from the collector junction of high-power semiconductor transistors on the reverse side of plates with formed structures is proposed. The proposed method ensures the quality of the soldered connection and thermal stabilization of semiconductor devices, increasing the reliability of the studied devices in radio electronic equipment systems.Results. This combination of sprayed metals provides a reliable contact to the collector area when the crystal is placed on the base of the case, which reduces the resistance of the ohmic transition and increases the output of suitable devices.Conclusion. Based on the results of experimental procedures, the optimal thicknesses of metal layers deposited on the reverse side of transistor crystals were obtained during the formation of metallization to fit crystals on the base of the case. The Ti-Ge system stability is studied. The technical result of the research is to improve the quality of planting by obtaining a uniform distribution of the Ti-Ge layer in a single technological cycle at a given temperature with a certain thickness for each metal separately.
topic titanium
germanium
solder
high-capacity semiconductor transistor
crystal
thermal stabilization
fusion point
sputtering
contact
url https://vestnik.dgtu.ru/jour/article/view/876
work_keys_str_mv AT taismailov methodforformingatitaniumgermaniumcontactlayerforthermostabilizationoftransistors
AT arshakhmayeva methodforformingatitaniumgermaniumcontactlayerforthermostabilizationoftransistors
AT shayusufov methodforformingatitaniumgermaniumcontactlayerforthermostabilizationoftransistors
AT ekazalieva methodforformingatitaniumgermaniumcontactlayerforthermostabilizationoftransistors
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