Method for forming a titanium-germanium contact layer for thermostabilization of transistors
Objective. The objective of the study is to obtain high-quality and reproducible electrophysical parameters of thin-film metal layers, the formation technology of which determines the reliability and quality of microelectronic products – silicon transistors.Methods. A method for forming a two-layer...
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Daghestan State Technical University
2021-01-01
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Online Access: | https://vestnik.dgtu.ru/jour/article/view/876 |
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doaj-864aabd8f3ef430b8844718ce22a52182021-07-28T20:54:38ZrusDaghestan State Technical UniversityVestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki 2073-61852542-095X2021-01-01474495610.21822/2073-6185-2020-47-4-49-56605Method for forming a titanium-germanium contact layer for thermostabilization of transistorsT. A. Ismailov0A. R. Shakhmayeva1Sh. A. Yusufov2E. Kazalieva3Daghestan State Technical UniversityDaghestan State Technical UniversityDaghestan State Technical UniversityDaghestan State Technical UniversityObjective. The objective of the study is to obtain high-quality and reproducible electrophysical parameters of thin-film metal layers, the formation technology of which determines the reliability and quality of microelectronic products – silicon transistors.Methods. A method for forming a two-layer titanium-germanium metallization to create a contact and remove heat from the collector junction of high-power semiconductor transistors on the reverse side of plates with formed structures is proposed. The proposed method ensures the quality of the soldered connection and thermal stabilization of semiconductor devices, increasing the reliability of the studied devices in radio electronic equipment systems.Results. This combination of sprayed metals provides a reliable contact to the collector area when the crystal is placed on the base of the case, which reduces the resistance of the ohmic transition and increases the output of suitable devices.Conclusion. Based on the results of experimental procedures, the optimal thicknesses of metal layers deposited on the reverse side of transistor crystals were obtained during the formation of metallization to fit crystals on the base of the case. The Ti-Ge system stability is studied. The technical result of the research is to improve the quality of planting by obtaining a uniform distribution of the Ti-Ge layer in a single technological cycle at a given temperature with a certain thickness for each metal separately.https://vestnik.dgtu.ru/jour/article/view/876titaniumgermaniumsolderhigh-capacity semiconductor transistorcrystalthermal stabilizationfusion pointsputteringcontact |
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DOAJ |
language |
Russian |
format |
Article |
sources |
DOAJ |
author |
T. A. Ismailov A. R. Shakhmayeva Sh. A. Yusufov E. Kazalieva |
spellingShingle |
T. A. Ismailov A. R. Shakhmayeva Sh. A. Yusufov E. Kazalieva Method for forming a titanium-germanium contact layer for thermostabilization of transistors Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki titanium germanium solder high-capacity semiconductor transistor crystal thermal stabilization fusion point sputtering contact |
author_facet |
T. A. Ismailov A. R. Shakhmayeva Sh. A. Yusufov E. Kazalieva |
author_sort |
T. A. Ismailov |
title |
Method for forming a titanium-germanium contact layer for thermostabilization of transistors |
title_short |
Method for forming a titanium-germanium contact layer for thermostabilization of transistors |
title_full |
Method for forming a titanium-germanium contact layer for thermostabilization of transistors |
title_fullStr |
Method for forming a titanium-germanium contact layer for thermostabilization of transistors |
title_full_unstemmed |
Method for forming a titanium-germanium contact layer for thermostabilization of transistors |
title_sort |
method for forming a titanium-germanium contact layer for thermostabilization of transistors |
publisher |
Daghestan State Technical University |
series |
Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki |
issn |
2073-6185 2542-095X |
publishDate |
2021-01-01 |
description |
Objective. The objective of the study is to obtain high-quality and reproducible electrophysical parameters of thin-film metal layers, the formation technology of which determines the reliability and quality of microelectronic products – silicon transistors.Methods. A method for forming a two-layer titanium-germanium metallization to create a contact and remove heat from the collector junction of high-power semiconductor transistors on the reverse side of plates with formed structures is proposed. The proposed method ensures the quality of the soldered connection and thermal stabilization of semiconductor devices, increasing the reliability of the studied devices in radio electronic equipment systems.Results. This combination of sprayed metals provides a reliable contact to the collector area when the crystal is placed on the base of the case, which reduces the resistance of the ohmic transition and increases the output of suitable devices.Conclusion. Based on the results of experimental procedures, the optimal thicknesses of metal layers deposited on the reverse side of transistor crystals were obtained during the formation of metallization to fit crystals on the base of the case. The Ti-Ge system stability is studied. The technical result of the research is to improve the quality of planting by obtaining a uniform distribution of the Ti-Ge layer in a single technological cycle at a given temperature with a certain thickness for each metal separately. |
topic |
titanium germanium solder high-capacity semiconductor transistor crystal thermal stabilization fusion point sputtering contact |
url |
https://vestnik.dgtu.ru/jour/article/view/876 |
work_keys_str_mv |
AT taismailov methodforformingatitaniumgermaniumcontactlayerforthermostabilizationoftransistors AT arshakhmayeva methodforformingatitaniumgermaniumcontactlayerforthermostabilizationoftransistors AT shayusufov methodforformingatitaniumgermaniumcontactlayerforthermostabilizationoftransistors AT ekazalieva methodforformingatitaniumgermaniumcontactlayerforthermostabilizationoftransistors |
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1721264622500052992 |