Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
We studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD). The sequential injection of DEZn and O2 plasma was employed for the plasma-enhanced atomic layer deposition...
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doaj-85acf502f3794e10a8bd19997803ce682020-11-24T22:21:37ZengAIP Publishing LLCAIP Advances2158-32262013-10-01310102114102114-1210.1063/1.4825230017310ADVTuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cellMi-jin Jin0Junhyeon Jo1Guru P. Neupane2Jeongyong Kim3Ki-Seok An4Jung-Woo Yoo5School of Mechanical and Advanced Material Engineering-Low dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan, 688-798, Republic of KoreaSchool of Mechanical and Advanced Material Engineering-Low dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan, 688-798, Republic of KoreaDepartment of Energy Science and IBS Center for Integrated Nanostructure Physics, Sungkyunkwan University, Suwon 440-746, Republic of KoreaDepartment of Energy Science and IBS Center for Integrated Nanostructure Physics, Sungkyunkwan University, Suwon 440-746, Republic of KoreaThin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon, 305-543, Republic of KoreaSchool of Mechanical and Advanced Material Engineering-Low dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan, 688-798, Republic of KoreaWe studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD). The sequential injection of DEZn and O2 plasma was employed for the plasma-enhanced atomic layer deposition of ZnO thin film. As the growth temperature of ZnO film was increased from 100 °C to 300 °C, the crystallinity of ZnO film was improved from amorphous to highly ordered (002) direction ploy-crystal due to self crystallization. Increasing oxygen plasma time in PEALD process also introduces growing of hexagonal wurtzite phase of ZnO nanocrystal. Excess of oxygen plasma time induces enhanced deep level emission band (500 ∼ 700 nm) in photoluminescence due to Zn vacancies and other defects. The evolution of structural and optical properties of PEALD ZnO films also involves in change of electrical conductivity by 3 orders of magnitude. The highly tunable PEALD ZnO thin films were employed as the electron conductive layers in inverted polymer solar cells. Our study indicates that both structural and optical properties rather than electrical conductivities of ZnO films play more important role for the effective charge collection in photovoltaic device operation. The ability to tune the materials properties of undoped ZnO films via PEALD should extend their functionality over the wide range of advanced electronic applications.http://dx.doi.org/10.1063/1.4825230 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Mi-jin Jin Junhyeon Jo Guru P. Neupane Jeongyong Kim Ki-Seok An Jung-Woo Yoo |
spellingShingle |
Mi-jin Jin Junhyeon Jo Guru P. Neupane Jeongyong Kim Ki-Seok An Jung-Woo Yoo Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell AIP Advances |
author_facet |
Mi-jin Jin Junhyeon Jo Guru P. Neupane Jeongyong Kim Ki-Seok An Jung-Woo Yoo |
author_sort |
Mi-jin Jin |
title |
Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
title_short |
Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
title_full |
Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
title_fullStr |
Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
title_full_unstemmed |
Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
title_sort |
tuning of undoped zno thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2013-10-01 |
description |
We studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD). The sequential injection of DEZn and O2 plasma was employed for the plasma-enhanced atomic layer deposition of ZnO thin film. As the growth temperature of ZnO film was increased from 100 °C to 300 °C, the crystallinity of ZnO film was improved from amorphous to highly ordered (002) direction ploy-crystal due to self crystallization. Increasing oxygen plasma time in PEALD process also introduces growing of hexagonal wurtzite phase of ZnO nanocrystal. Excess of oxygen plasma time induces enhanced deep level emission band (500 ∼ 700 nm) in photoluminescence due to Zn vacancies and other defects. The evolution of structural and optical properties of PEALD ZnO films also involves in change of electrical conductivity by 3 orders of magnitude. The highly tunable PEALD ZnO thin films were employed as the electron conductive layers in inverted polymer solar cells. Our study indicates that both structural and optical properties rather than electrical conductivities of ZnO films play more important role for the effective charge collection in photovoltaic device operation. The ability to tune the materials properties of undoped ZnO films via PEALD should extend their functionality over the wide range of advanced electronic applications. |
url |
http://dx.doi.org/10.1063/1.4825230 |
work_keys_str_mv |
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