Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide
Tunnel field-effect transistors (TFETs) are known to exhibit degraded electrical characteristics at smaller channel lengths, primarily due to direct source-to-drain band-to-band tunneling (BTBT). In this paper, we propose a technique to suppress direct source-to-drain BTBT by increasing the effectiv...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8681162/ |