Oxidation of vanadium metal in oxygen plasma and their characterizations
In this report, the role of oxygen plasma on oxidation of vanadium (V) metal and the volatilization of its oxides has been studied as a function of source (V metal strip) temperature (Tss) and oxygen partial pressure (PO2). The presence of O2-plasma not only enhances the oxidation rate but also fici...
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Online Access: | http://dx.doi.org/10.1063/1.4931997 |
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doaj-853dc35ab9f54309ab110e09c8dfedda2020-11-25T00:26:38ZengAIP Publishing LLCAIP Advances2158-32262015-09-0159097172097172-1210.1063/1.4931997083509ADVOxidation of vanadium metal in oxygen plasma and their characterizationsRabindar Kumar Sharma0Megha Singh1Prabhat Kumar2G. B. Reddy3Thin film laboratory, Department of Physics Indian Institute of Technology Delhi, New Delhi – 110016, IndiaThin film laboratory, Department of Physics Indian Institute of Technology Delhi, New Delhi – 110016, IndiaThin film laboratory, Department of Physics Indian Institute of Technology Delhi, New Delhi – 110016, IndiaThin film laboratory, Department of Physics Indian Institute of Technology Delhi, New Delhi – 110016, IndiaIn this report, the role of oxygen plasma on oxidation of vanadium (V) metal and the volatilization of its oxides has been studied as a function of source (V metal strip) temperature (Tss) and oxygen partial pressure (PO2). The presence of O2-plasma not only enhances the oxidation rate but also ficilitates in transport of oxide molecules from metal to substrate, as confirmed by the simultanous deposition of oxide film onto substrate. Both the oxidized metal strips and oxide films deposited on substrates are characterized separately. The structural and vibrational results evidence the presence of two different oxide phases (i.e. orthorhombic V2O5 and monocilinic V O2) in oxide layers formed on V metal strips, whereas the oxide films deposited on substrates exhibit only orthorhombic phase (i.e. V2O5). The decrease in peak intensities recorded from heated V metal strips on increasing Tss points out the increment in the rate of oxide volatilization, which also confirms by the oxide layer thickness measurements. The SEM results show the noticeable surface changes on V-strips as the function of Tss and PO2 and their optimum values are recorded to be 500 ˚ C and 7.5 × 10−2 Torr, respectively to deposit maximum thick oxide film on substrate. The formation of microcracks on oxidized V-strips, those responsible to countinue oxidation is also confirmed by SEM results. The compositional study of oxide layers formed on V-strips, corroborates their pureness and further assures about the existence of mixed oxide phases. The effect of oxygen partial pressure on oxidation of V-metal has also been discussed in the present report. All the results are well in agreement to each other.http://dx.doi.org/10.1063/1.4931997 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Rabindar Kumar Sharma Megha Singh Prabhat Kumar G. B. Reddy |
spellingShingle |
Rabindar Kumar Sharma Megha Singh Prabhat Kumar G. B. Reddy Oxidation of vanadium metal in oxygen plasma and their characterizations AIP Advances |
author_facet |
Rabindar Kumar Sharma Megha Singh Prabhat Kumar G. B. Reddy |
author_sort |
Rabindar Kumar Sharma |
title |
Oxidation of vanadium metal in oxygen plasma and their characterizations |
title_short |
Oxidation of vanadium metal in oxygen plasma and their characterizations |
title_full |
Oxidation of vanadium metal in oxygen plasma and their characterizations |
title_fullStr |
Oxidation of vanadium metal in oxygen plasma and their characterizations |
title_full_unstemmed |
Oxidation of vanadium metal in oxygen plasma and their characterizations |
title_sort |
oxidation of vanadium metal in oxygen plasma and their characterizations |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2015-09-01 |
description |
In this report, the role of oxygen plasma on oxidation of vanadium (V) metal and the volatilization of its oxides has been studied as a function of source (V metal strip) temperature (Tss) and oxygen partial pressure (PO2). The presence of O2-plasma not only enhances the oxidation rate but also ficilitates in transport of oxide molecules from metal to substrate, as confirmed by the simultanous deposition of oxide film onto substrate. Both the oxidized metal strips and oxide films deposited on substrates are characterized separately. The structural and vibrational results evidence the presence of two different oxide phases (i.e. orthorhombic V2O5 and monocilinic V O2) in oxide layers formed on V metal strips, whereas the oxide films deposited on substrates exhibit only orthorhombic phase (i.e. V2O5). The decrease in peak intensities recorded from heated V metal strips on increasing Tss points out the increment in the rate of oxide volatilization, which also confirms by the oxide layer thickness measurements. The SEM results show the noticeable surface changes on V-strips as the function of Tss and PO2 and their optimum values are recorded to be 500
˚
C
and 7.5 × 10−2 Torr, respectively to deposit maximum thick oxide film on substrate. The formation of microcracks on oxidized V-strips, those responsible to countinue oxidation is also confirmed by SEM results. The compositional study of oxide layers formed on V-strips, corroborates their pureness and further assures about the existence of mixed oxide phases. The effect of oxygen partial pressure on oxidation of V-metal has also been discussed in the present report. All the results are well in agreement to each other. |
url |
http://dx.doi.org/10.1063/1.4931997 |
work_keys_str_mv |
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