Frequency Dependence of C-V Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics
Capacitance of metal–insulator–Si structures containing high permittivity dielectric exhibits complicated behaviour when voltage and frequency dependencies are studied. From our study on metal (Al, Au, W)–Ta2O5/SiO2–Si structures, we identify serial C-R measurement mode to be more convenient for use...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2017-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2017/9745934 |